Memristive model of hysteretic field emission from carbon nanotube arrays

Gorodetskiy, D. V.; Гусельников, А. В.; Shevchenko, S. N.; Kanygin, M. A.; Окотруб, А. В.; Pershin, Yuriy V.

doi:10.1117/1.jnp.10.012524

Cited by 12 publications

(12 citation statements)

References 23 publications

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“…We found that memristive switching of a carbon nanotube is related to the formation and subsequent redistribution of a non-uniform elastic strain and piezoelectric charge in a nanotube under the influence of an external electric field [ 18 , 19 , 20 , 21 , 22 ]. In addition, the presence of flexoelectric and piezoelectric properties in CNTs could explain the phenomenon of hysteresis of the current-voltage characteristics in the study of the emission properties of vertically aligned carbon nanotubes (VA CNTs) and electric parameters of nanotube bundles, which still has not been unambiguously explained [ 22 , 23 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric Response of Multi-Walled Carbon Nanotubes

et al. 2018

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Recent studies in nanopiezotronics have indicated that strained graphene may exhibit abnormal flexoelectric and piezoelectric properties. Similar assumptions have been made with regard to the properties of carbon nanotubes (CNTs), however, this has not so far been confirmed. This paper presents the results of our experimental studies confirming the occurrence of a surface piezoelectric effect in multi-walled CNTs under a non-uniform strain. Using atomic force microscopy, we demonstrated the piezoelectric response of multi-walled CNTs under compression and bending. The current generated by deforming an individual CNT was shown to be −24 nA. The value of the surface potential at the top of the bundle of strained CNTs varied from 268 mV to −110 mV, depending on strain type and magnitude. We showed that the maximum values of the current and the surface potential can be achieved when longitudinal strain predominates in a CNT. However, increasing the bending strain of CNTs does not lead to a significant increase in current and surface potential, due to the mutual compensation of piezoelectric charges concentrated on the CNT side walls. The results of the study offer a number of opportunities and challenges for further fundamental research on the piezoelectric properties of carbon nanotubes as well as for the development of advanced CNT-based nanopiezotronic devices.

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Section: Introductionmentioning

confidence: 99%

Piezoelectric Response of Multi-Walled Carbon Nanotubes

et al. 2018

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“…Hysteresis in current–voltage characteristics is useful for memory devices commonly referred to as memristors . Memristive devices are novel elements of electric circuits, in which the relation between output and input signals is determined by a dynamic internal state variable .…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9][10] Hysteresis in field emission is ubiquitous (e.g., see refs. [4,[11][12][13][14]). It is therefore important to develop a transparent and functional theory that would describe different hysteretic dependences possibly exhibiting nontrivial behavior such as abrupt changes or self-crossings.…”

Section: Introductionmentioning

confidence: 99%

A Memristive Model for Graphene Emitters: Hysteresis and Self‐Crossing

Gorodetskiy

Shevchenko

Гусельников

et al. 2020

Physica Status Solidi (b)

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Hysteresis exhibited by current–voltage characteristics during field‐emission experiments is often considered undesirable in terms of practical applications. However, this is an appealing effect for the purposes of memristive devices. A two‐stage model to describe hysteretic characteristics is developed, with a particular focus on the system which includes a cathode made of a single‐layered graphene sheet on a substrate. In addition to hysteresis, the current–voltage curves also display an unusual self‐crossing behavior. The presented memristive model can be used for quantitative description of different hysteretic characteristics such as abrupt changes and self‐crossings and for understanding and modeling the processes associated with field emission from plane graphene emitters.

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“…Проведенные экспериментальные исследования показали, что индивидуальные ориентированные углеродные нанотрубки проявляют воспроизводимый мемристорный эффект, связанный с их деформацией и возникновением внутреннего электрического поля [11,12]. Также имеются сообщения о наблюдении эффекта переключения сопротивления при исследовании эмиссионных характеристик массивов вертикально ориентированных УНТ [13][14][15][16] и при исследовании пучков УНТ методом сканирующей туннельной микроскопии (СТМ) [17]. При этом переключение сопротивления УНТ происходило из высокоомного в низкоомное состояние, что не согласуется с теорией электромеханического эффекта, проявляющегося в увеличении сопротивления УНТ в процессе ее деформации [18].…”

Section: Introductionunclassified

“…Анализ публикаций [11][12][13][14][15][16][17][18][19] показал, что необходимым условием проявления мемристорного эффекта является предварительное формирование в ориентированной УНТ неравномерной упругой деформации, которая приводит к возникновению пьезоэлектрических зарядов и форми-рованию внутренней напряженности поля в нанотрубке [18,[20][21][22]. Последующее приложение внешнего электрического поля к неравномерно деформированной УНТ вызывает перераспределение деформации в ней и, как следствие, изменение сопротивления.…”

Section: Introductionunclassified