Memristive Effect in Two-Layered Structures Based on Lithium Doped ZnO Films

Igityan, A.; Aghamalyan, N. R.; Petrosyan, S. I.; Kafadaryan, Y. A.

doi:10.3103/s1068337218010073

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…For example, in 2016, Y. Kafadaryan et al proposed an Ag/ZnO:Li/SnO 2 :F resistive switching device, which achieves a positive voltage pulse of 3.5 V, quickly switching time of 20 ms and a high repeatability up to 120 s [23]. In 2018, A. S. Igityan et al proposed a structure of Au/Li 10 ZnO/Li 1 ZnO/LaB 6 of resistive switching device with a low resistance ratio of 10, high data storage time more than 3 h and more switching cycles up to 350 cycles [24]. On the basis of that, without a robust strategy to control stability and achieve a high performance, high ON/OFF current ratio and low set voltage resistive switching device could hardly have been attained.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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Section: Introductionmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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Binary metal oxide-based resistive switching memory devices: A status review

Patil

Dongale

Kamat

et al. 2023

Materials Today Communications

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Realization of In:ZnO/PEDOT:PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications

Rasool

Amiruddin

Kossar

et al. 2020

Journal of Applied Physics

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The present research reports on a hybrid multifunctional device for UV light detection and non-volatile resistive switching memory based on n-In:ZnO/poly 3,4-ethylene dioxythiophene:polystyrene sulfonate (PEDOT:PSS) junctions. Using a spray pyrolysis method, indium (1–5 at. %) doped ZnO thin films (IZO) were deposited on the pre-heated glass substrate. The structural analysis of IZO thin films shows that all the prepared samples exhibit a hexagonal wurtzite structure with preferential orientation along the (101) plane. The morphological analysis shows a uniform distribution of grains without any voids. The optical transmission spectra reveal that IZO thin films show higher transparency (>90%) in the visible region. With an optimum doping concentration of In (4 at. %), the deposited IZO thin films exhibit high carrier concentration and low electrical resistivity value of 4.58 × 1020 cm−3 and 4.01 × 10−2 Ω cm, respectively. The current–voltage (I–V), photoresponse, and resistive switching behavior of the fabricated n-IZO/PEDOT:PSS-based hybrid device was studied. Under an external reverse bias, the device exhibits a high photoresponsivity (R) value of 0.31 A/W and fast photoresponse switching speed with the measured rise and fall time of 0.08 and 1 s, respectively. It was proposed that the formation/rupture of both anionic and cationic conductive filaments plays a crucial role in the obtained resistive characteristics of the fabricated hybrid device.

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Memristive Effect in Two-Layered Structures Based on Lithium Doped ZnO Films

Cited by 3 publications

References 12 publications

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Binary metal oxide-based resistive switching memory devices: A status review

Realization of In:ZnO/PEDOT:PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications

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