Memristive effect in niobium oxide thin films obtained by the pulsed laser deposition

Novodvorsky, O. A.; Parshina, L. S.; Храмова, О. Д.; Гусев, Д. Е.; Polyakov, A. S.

doi:10.1016/j.tsf.2023.139945

Cited by 1 publication

(1 citation statement)

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“…The impact of the Nb-Ti parent metal’s composition on the electrical behaviour of their mixed anodic oxides was investigated for screening possible memristive improvements as compared to pure Nb and Ti oxides. Nb was chosen due to its already reported potential for neuromorphic application [ 33 , 34 , 35 ] and Ti because it is already a well-studied and understood material for memristors [ 13 , 31 , 32 ]. Compositional spreads enable the study of a large number of alloys efficiently, making it possible to find the composition that is most suitable for a specific purpose [ 36 ], e.g., the memristor with the best properties within a given compositional range.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Knapic,

Minenkov,

Atanasova

et al. 2024

Nanomaterials

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A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation.

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