Memristive effect in a nanotubular layer of anodized titanium dioxide

2016 International Siberian Conference on Control and Communications (SIBCON)

et al. 2016

Self Cite

We have designed an automatic complex equipped by a Cascade Microtech MPS150 micro-probing station and a PXIe-4143 source measure unit from National Instruments Corporation to investigate the electrical properties of metal/insulator/metal sandwich structures. We have also succeeded in implementing conditions for the current-voltage characteristics measurements and in simulating procedures for the multiple reading/writing of digital information by means of resistive switching inside the nanostructured layers. We have studied anodized-titanium-dioxide-based Ti/TiO2-NT/Au structures with diameter of 100 micrometers, synthesized by the mask method. For the micromemristors produced, we have estimated the resistance in the low-(<10 kOhm) and high-ohmic (> 50 kOhm) states.

Section: B Experimental Techniquesupporting

confidence: 90%

“…A harmonic signal with amplitude of 1.5 V and a frequency of 0.01 Hz was supplied to their electric contacts. The currentvoltage characteristics were measured after the electroforming procedure according to [8,9], wherein the current was limited at 5 mA.…”

Section: B Experimental Techniquementioning

confidence: 99%

Automatized complex for measuring the electrical properties of MIM structures

Gryaznov

Дорошева

2016 International Siberian Conference on Control and Communications (SIBCON)

et al. 2016

Self Cite

“…Following increase of U leads to the LRS state switch at a positive voltage of U = 0.5-1.5 V. Thus, the bipolar resistive switching is registered for all fabricated Ti/TiO2-NT/Au sandwich structures. This fact agrees well with the reports [4][5][6][7]. By contrast, it can be noted that the values of the current through the Ti/TiO2-NT/Au structure are more than 5 times lower than [4,6].…”

Section: B the Current-voltage Measurements Under Static Modesupporting

confidence: 92%

Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO<inf>2</inf>-NT/Au structure

Дорошева

2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)

Камалов

et al. 2018

Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 m diameter based on Ti/TiO2-NT/Au sandwich structures with an oxide layer thickness of 80, 120, 160 and 200 nm are fabricated. Current-voltage (CV) characteristics for the obtained samples in the static and dynamic operation modes are studied. Resistance in high and low resistance states is estimated. Basing on the analysis of the CV characteristics in dynamic mode (> 14 000 switchings) a prospective of use for synthesized Ti/TiO2-NT/Au micromemristors with oxide layer thickness of 160 nm in nonvolatile memory is shown.

“…There is an effect of reversible resistance switching for several MIM structures based on transition metals (TiO2, ZrO2, HfO2, ets.) obtained by anodizing or electrochemical oxidation [2,[7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Unidirectional synapse-like behavior of Zr/ZrO<inf>2</inf>-NT/Au layered structure

2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)

Камалов

Kozhevina

et al. 2018

Zirconia nanotubular layer with an outer tube diameter  25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Currentvoltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown.