Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Pazos, Sebastian; Shen, Yaqing; Zhang, Haoran; Verdú, Jordi; Fontana, Andrés; Zheng, Wenwen; Yuan, Yue; Alharbi, Osamah; Ping, Yue; Guerrero, Eloi; Acosta, Lluís; de Paco, Pedro; Psychogiou, Dimitra; Shamim, Atif; Akinwande, Deji; Lanza, Mario

doi:10.1038/s41928-024-01192-2

Nat Electron

2024

DOI: 10.1038/s41928-024-01192-2

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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Sebastian Pazos,

Yaqing Shen,

Haoran Zhang

et al.

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Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

Zhao,

Du,

Liu

et al. 2024

J. Phys. Chem. C

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Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

Zhao,

Du,

Liu

et al. 2024

J. Phys. Chem. C

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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Cited by 1 publication

References 42 publications

Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

Crystal Structure, Stability, and Metal–Insulator–Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

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