2011
DOI: 10.1109/tns.2011.2164555
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Memory Reliability Model for Accumulated and Clustered Soft Errors

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Cited by 11 publications
(4 citation statements)
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“…With increasing integration density, the probability of multi-bit upsets (MBU) also increases [16]. A comparison of the scaling trend of Q crit between the 6T and 8T SRAM bit cell is shown in Fig.…”
Section: Sram Errors Due To Particle Strikes (Q Crit )mentioning
confidence: 99%
“…With increasing integration density, the probability of multi-bit upsets (MBU) also increases [16]. A comparison of the scaling trend of Q crit between the 6T and 8T SRAM bit cell is shown in Fig.…”
Section: Sram Errors Due To Particle Strikes (Q Crit )mentioning
confidence: 99%
“…For example, the failure probability of one SRAM cell depends on the error state of neighboring SRAM cells due to the probability of Multi Bit Upset (MCU) [8]. For an 8T SRAM cell it also depends on the stored value of the SRAM cell as the bit flip probability of a stored one is different from a stored zero.…”
Section: Correlated (Error) States Smentioning
confidence: 99%
“…45"nm" 65"nm" 90"nm" Figure 5: Conditional probabilities for multiple upsets dependent on the first single event upset for different technologies [16,8]. Multi Bit Upsets we therefore have to add error state variables to the model.…”
Section: Condiandonal)probability)mentioning
confidence: 99%
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