Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

Li, Qingjiang; Khiat, Ali; Salaoru, Iulia; Papavassiliou, Christos; Xu, Hui; Prodromakis, Themis

doi:10.1038/srep04522

Cited by 100 publications

(69 citation statements)

References 35 publications

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“…15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration.…”

mentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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mentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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“…In addition, the threshold voltages to switch the conductance of the device were shown to be state-dependent, which emerges from the interplay of a memristance with a memcapacitance. In contrast to other realizations of memristors, [47][48][49] memristance and memcapacitance switching of the presented device are observed between different terminals. The memristance is measured in the two-terminal geometry and the memcapacitance between the lateral gates and the wire.…”

Section: Discussionmentioning

confidence: 61%

Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing

et al. 2016

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We present optically and electrically tunable conductance modifications of a site-controlled quantum dot memristor. The conductance of the device is tuned by electron localization on a quantum dot. The control of the conductance with voltage and low power light pulses enables applications in neuromorphic and arithmetic computing. As in neural networks, applying pre-and post-synaptic voltage pulses to the memristor allows to increase (potentiation) or decrease (depression) the conductance by tuning the time difference between the electrical pulses. Exploiting state-dependent thresholds for potentiation and depression, we were able to demonstrate a memory-dependent induction of learning. The discharging of the quantum dot can further be induced by low power light pulses in the nW-range. In combination with the state-dependent threshold voltage for discharging, this enables applications as generic building blocks to perform arithmetic operations in bases ranging from binary to decimal with low power optical excitation. Our findings allow the realization of optoelectronic memristor-based synapses in artificial neural networks with a memory-dependent induction of learning and enhanced functionality by performing arithmetic operations.

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“…Transferring Pt/TiO x /Pt memristors from rigid Si substrate to flexible Parylene substrate required several modifications in the fabrication flowchart (figure 1), when compared to previously fabricated TiO x ReRAM [10,11,23,28,39]. Here, a Si support substrate was used for achieving similar insulating characteristics and surface roughness quality.…”

Section: Methodsmentioning

confidence: 99%

“…These applications require higher memory capabilities, which memristors are known to provide. Memristors are also attractive thanks to their intrinsic characteristics of nonvolatile storage, distinct OFF/ON resistive states, either analogue (gradual) or digital (abrupt) switching, along with their promising high memory density capability thanks to their simple structure and potential back-end of line compatibility [6][7][8][9][10][11]. Nevertheless, many challenges still remain before achieving memristor integration into flexible substrates, such as temperature compatibility, surface roughness and materials compatibility.…”

Section: Introductionmentioning

confidence: 99%

Resistive switching of Pt/TiO_x/Pt devices fabricated on flexible Parylene-C substrates

et al. 2016

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Pt/TiO x /Pt resistive switching (RS) devices are considered to be amongst the most promising candidates in memristor family and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible RS memory technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiO x /Pt stack onto flexible Parylene-C substrates. The devices were electrically characterised, exhibiting both digital and analogue memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in neuromorphic computing, data processing, implantable sensors and bio-compatible neural interfaces.S Online supplementary data available from stacks.iop.org/NANO/0/000000/mmedia

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Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

Cited by 100 publications

References 35 publications

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing

Resistive switching of Pt/TiO_x/Pt devices fabricated on flexible Parylene-C substrates

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Memory Impedance in TiO2 based Metal-Insulator-Metal Devices

Cited by 100 publications

References 35 publications

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Electro-Photo-Sensitive Memristor for Neuromorphic and Arithmetic Computing

Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

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Product

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Resistive switching of Pt/TiO_x/Pt devices fabricated on flexible Parylene-C substrates