Memory elements based on thin film field-effect transistor

Abstract

We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films. The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect transistor based on ZnO:Li films as bistable element for information writing has been shown.

Photoconductivity of ZnO based granular structures

“…An important advantage of these films is a possibility of a control over their properties, type and magnitude of the conductivity by selecting either donor or acceptor dopants 1,2 . So, Ga impurity works as a donor, raising conductivity without worsening an optical transparency, while Li impurity is an acceptor and reduces the conductivity [3][4][5] . ZnO films due to high refractive index and chemical stability are also an appropriate material for the fabrication of photonic crystals 6 or nanocomposites which are considered as the high effective emission source for the next-generation LED 7 .…”

Electronic phase transitions in transparent zinc oxide thin films

“…An important advantage of ZnO films is the possibility to control their properties, in particular, the type and magnitude of conductivity, by introduction of donor or acceptor impurities 1,2 . So, Ga impurity works as a donor, raising conductivity without worsening optical transparency, while Li impurity works as an acceptor and reduces the conductivity [3][4][5] . A defect complex of an interstitial zinc atom and an oxygen vacancy is also a donor center.…”

“…Post growth annealing in air leads to saturation of films by oxygen, i.e., to decrease of oxygen vacancies, and, as a result, to decrease of donor centers. Thus it is possible to obtain compensated semiconductors whose conductivity may be varied by several orders of magnitude 3,5 .…”