Memory effects in functionalized conducting polymer films: titanocene derivatized polypyrrole in contact with THF solutions

Vorotyntsev, Mikhail A.; Skompska, Magdalena; Pousson, E; Goux, Jerome; Moı̈se, Claude

doi:10.1016/s0022-0728(03)00038-x

Cited by 56 publications

(42 citation statements)

References 45 publications

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“…However, to our knowledge, there has been no report on the photoconductivity of a single organic polymer nanotube that becomes photoactive when irradiated with UV-vis light. Poly(p-phenylenevinylene) (PPV) is known to be photoconductive, [14,15] electrically conductive when doped, [16] and photo-and electroluminescent. [17] Therefore, PPV could be one of the most interesting organic materials in nanoscience and technology if it were possible to fabricate it into desired shapes of nanoscale dimensions.…”

mentioning

confidence: 99%

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

Peng

Ran

et al. 2005

Advanced Materials

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Fabrication and Characterization of the Memory Device: The indium tin oxide (ITO)/glass substrate was pre-cleaned with water, acetone, and isopropanol, in that order, in an ultrasonic bath for 15 min. A toluene solution of PKEu (15 mg mL ±1 ) was spin-coated onto ITO, followed by solvent removal in a vacuum chamber at 10 ±5 torr (1 torr = 133 Pa) at room temperature. The thickness of the polymer layer was about 50 nm. Finally, the 100 nm thick square Al electrodes for needle contacts were thermally evaporated at a pressure around 10 ±7 torr. Cyclic voltammetry (CyV) was performed using an Autolab potentiostat/galvanostat under an argon atmosphere. Transmission electron microscopy (TEM) measurements were carried out on a JEOL JEM-2010F field emission electron microscope equipped with a GATAN Multiscan camera. Other electrical measurements were carried out on a HP 4156A semiconductor parameter analyzer under ambient conditions. Data storage using scanning probe microscopy (SPM) has attracted a great deal of attention because of its nanometer-scale storage capacity.[1] In principle, SPM memory has the potential to achieve a storage density of 6 Pb in ±2 (»0.9 Pb cm ±2; Pb = petabits) when using an atom or a vacancy as an information bit. Among the varieties of SPM storage methods proposed in the last decade, the use of a scanning tunneling microscopy (STM) tip current as a nanometer-sized heater to induce a localized physical change of the storage media for data writing, bears resemblance to methods for making commercial magneto-optic (MO) and phase-change disks.[2] Previous experimental and theoretical studies have demonstrated the feasibility of such kinds of thermophysical STM storage techniques. [2,3] Herein, we report a novel STM-based thermochemical technique for realizing ultrahigh-density data storage. The basic idea is to use the heating effect of the current from an COMMUNICATIONS

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mentioning

confidence: 99%

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

Peng

Ran

et al. 2005

Advanced Materials

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“…Under carefully chosen polymerization conditions (in particular, for a slow deposition rate), the factor f mon(redox) is really close to 1 while another factor, f polym , is probably below 0.9 even in the best cases [52]. The value of the (maximum) oxidation degree, α redox , depends on numerous factors, first of all on the monomer and the solvent.…”

Section: Redox Activity Of Polymer Filmsmentioning

confidence: 99%

“…According to Equation 2.7, its maximum value is η max = α redox (2 + α polym ) −1 , which is much smaller than 1, for example, it is equal to 0.11 for α redox = α polym = 0.25. In this context it seems to be more logical [52] to use the term polymerization efficiency, y, for the ratio of the experimentally found value of η to its ''theoretical maximum'' for this polymer family the deviation of which from 1 characterizes the losses of the electroactive monomer units in the course of deposition:…”

Section: Redox Activity Of Polymer Filmsmentioning

confidence: 99%

Mechanisms of Electropolymerization and Redox Activity: Fundamental Aspects

Vorotyntsev

Zinovyeva

Конев

2010

Electropolymerization

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“…Thus, organic and polymer materials are promising candidates for use in future nonvolatile memory device applications, which it is hoped will overcome the limitations of silicon-based memory devices. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] However, organic materials require more elaborate fabrication processes than inorganic materials, such as vacuum evaporation and deposition. Deposited organic layers have relatively low boiling points and low chemical resistances, and thus severe damage to such layers can result from the processing involved in the fabrication of memory devices.…”

Section: Introductionmentioning

confidence: 99%

“…As a result, significant research effort is currently going into the development of polymer switching materials with properties and processability that meet the requirements of producing nonvolatile memory devices; several such polymer materials have been reported so far. [10][11][12][13][14][15][16][17][18] Among these materials, only a few exhibit satisfactory switching characteristics. [10][11][12][13][14] However, their switching ON and OFF voltages (V c,ON , critical voltage to turn switch on, and V c,OFF , critical voltage to turn switch off) are high.…”

Section: Introductionmentioning

confidence: 99%

Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films

Baek

Lee

Kim

et al. 2007

Adv Funct Materials

134

103

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Recent increases in the demand for mobile devices have stimulated the development of nonvolatile memory devices with high performance. In this Communication, we describe the fabrication of low‐cost, high‐performance, digital nonvolatile memory devices based on semiconducting polymers, poly(o‐anthranilic acid) and poly(o‐anthranilic acid‐co‐aniline). These memory devices have ground‐breaking and novel current–voltage switching characteristics. The devices are switchable in a very low voltage range (which is much less than those of all other devices reported so far) with a very high ON/OFF current ratio (which is on the order of 105). The low critical voltages have the advantage for nonvolatile memory device applications of low operation voltages and hence low power consumption. With this very low power consumption, the devices demonstrate in air ambient to have very stable ON‐ and OFF‐states without any degradation for a very long time (which has been confirmed up to one year so far) and to be repeatedly written, read and erased. Our study proposes that the ON/OFF switching of the devices is mainly governed by a filament mechanism. The high ON/OFF switching ratio and stability of these devices, as well as their repeatable writing, reading and erasing capability with low power consumption, opens up the possibility of the mass production of high performance digital nonvolatile polymer memory devices with low cost. Further, these devices promise to revolutionize microelectronics by providing extremely inexpensive, lightweight, and versatile components that can be printed onto plastics, glasses or metal foils.

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Memory effects in functionalized conducting polymer films: titanocene derivatized polypyrrole in contact with THF solutions

Cited by 56 publications

References 45 publications

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

Scanning‐Tunneling‐Microscopy Based Thermochemical Hole Burning on a New Charge‐Transfer Complex and Its Potential for Data Storage

Mechanisms of Electropolymerization and Redox Activity: Fundamental Aspects

Novel Digital Nonvolatile Memory Devices Based on Semiconducting Polymer Thin Films

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