Memory Conductance Switching in a Ni–Ti–O Compound Thin Film

Kim, Jongmin; Jang, Byeonguk; Kim, Duhwan; Im, Hyunsik; Jung, Woo Young; Kim, Hyungsang

doi:10.7567/jjap.51.104102

Cited by 7 publications

(4 citation statements)

References 29 publications

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“…[http://dx.doi.org/10.1063/1.4884303] Electrically induced resistive switching phenomena between two different resistance states, a high resistance state (HRS) and a low resistance state (LRS), is often observed in various metal-I-metal structures, in which the "I" layer ranges from the insulating metal oxides, [1][2][3][4] to more complex materials, [5][6][7][8][9][10][11] such as organic matter. 12,13 Besides their intriguing physics, this phenomenon has attracted considerable attention in the memory industry due to its potential application in next-generation nonvolatile memories, which are often abbreviated as ReRAM or RRAM.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Kim

Lee

et al. 2014

AIP Advances

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A transparent polymer-based resistive switching device containing In2O3 nanocrystals (NCs) is fabricated, and its nonvolatile memory characteristics are evaluated. Very clear reversible counter-clockwise bipolar-type resistive switching phenomena are observed. Stable retention is demonstrated. An Analysis of the temperature dependence of the bistable resistance states reveals additional features, not reported in previous studies, that the observed resistance switching is due to oxygen ions drift-induced redox reactions at the polymer/In2O3 NCs interface. The RESET and SET switching times (τRESET and τSET), which are defined as pulse widths extrapolated by the steepest slopes in the transition region, are τRESET ∼ 550 nsec and τSET ∼ 900 nsec. The authors propose that microscopic potential modification occurring near the polymer/In2O3 NCs boundaries plays a key role in determining resistive switching properties.

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Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Kim

Lee

et al. 2014

AIP Advances

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“…NiTiO 3 (NTO) is a technologically relevant material proven suitable within photo catalysis, high-k dielectrics and non-volatile memory [1][2][3][4][5]. In addition, ab initio calculations predict ferroelectricity and crystal structure dependent weak ferromagnetism, potentially suitable for sensor, microwave and spintronic applications [6].…”

Section: Introductionmentioning

confidence: 99%

“…Ferroelectricity and weak ferromagnetism have indeed been observed in bulk samples of NTO as well [14], but the report did not discuss the crystal symmetry of the samples. Thin films of NTO have previously been made by various deposition techniques, including aerosol-assisted CVD [2], sol-gel methods [3,[15][16][17][18], dip-coating [19] and RF-sputtering [4,5], as well as with the previously mentioned pulsed laser deposition [10][11][12]. Especially for the latter technique, compositional control seems to be challenging.…”

Section: Introductionmentioning

confidence: 99%

Phase and Orientation Control of NiTiO3 Thin Films

2019

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Subtle changes in the atomic arrangement of NiTiO3 in the ilmenite structure affects its symmetry and properties. At high temperatures, the cations are randomly distributed throughout the structure, resulting in the corundum structure with R−3c symmetry. Upon cooling, the cations order in alternating layers along the crystallographic c axis, resulting in the ilmenite structure with R−3 symmetry. Related to this is the R3c symmetry, where the cations alternate both perpendicularly and along the c axis. NiTiO3 with the latter structure is highly interesting as it exhibits ferroelectric properties. The close relationship between structure and properties for ilmenite-related structures emphasizes the importance of being able to control the symmetry during synthesis. We show that the orientation and symmetry of thin films of NiTiO3 formed by atomic layer deposition (ALD) can be controlled by choice of substrate. The disordered phase (R−3c), previously only observed at elevated temperatures, have been deposited at 250 °C on α-Al2O3 substrates, while post-deposition annealing at moderate temperatures (650 °C) induces ordering (R−3). We have in addition explored the symmetry and epitaxial orientation obtained when deposited on substrates of LaAlO3(100), SrTiO3(100) and MgO(100). The presented work demonstrates the possibilities of ALD to form metastable phases through choice of substrates.

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“…Nonvolatile memory (NVM) technologies have been widely implemented for data storage of mobile electronics due to their low power consumption, and resistive random access memory (ReRAM) has recently attracted a considerable amount of attention for use as next-generation NVM. ReRAM offers several potential advantages, including low power consumption, simple metal-insulating metal oxide–metal (MIM) structure, nonvolatility, faster access speed, higher density, and easier fabrication processes. − Numerous ReRAM materials, including SrZiO 3 , ZnO, , NiO, , Ni–Ti–O, Al 2 O 3 , and TiO 2 , , exhibit resistive switching memory characteristics that make them suitable for use in next-generation memory devices. Although many of these materials have been studied, tungsten oxide (WO 3 )-based resistive switching memory (ReRAM) has attracted a considerable amount of attention because it exhibits promising properties in terms of scalability, switching speed, endurance, retention, CMOS compatibility, etc. − …”

Section: Introductionmentioning

confidence: 99%

Effect of Electronegativity on Bipolar Resistive Switching in a WO₃-Based Asymmetric Capacitor Structure

Kim

Inamdar

et al. 2016

ACS Appl. Mater. Interfaces

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This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.

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Memory Conductance Switching in a Ni–Ti–O Compound Thin Film

Cited by 7 publications

References 29 publications

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Phase and Orientation Control of NiTiO3 Thin Films

Effect of Electronegativity on Bipolar Resistive Switching in a WO₃-Based Asymmetric Capacitor Structure

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Memory Conductance Switching in a Ni–Ti–O Compound Thin Film

Cited by 7 publications

References 29 publications

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Reversible conductance switching characteristics in a polymer-In2O3 nanocrystals junction

Phase and Orientation Control of NiTiO3 Thin Films

Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure

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Effect of Electronegativity on Bipolar Resistive Switching in a WO₃-Based Asymmetric Capacitor Structure