Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Choi, Seong Hee; Yang, Hyundeok; Chang, Man; Baek, Seungjae; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

doi:10.1063/1.1951060

Cited by 53 publications

(31 citation statements)

References 11 publications

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“…Recently it started to attract attention both as a host embedding material for nanocrystals 10,11,12 and also for optical waveguide applications 2 . The α-and β-Si 3 N 4 have hexagonal conventional cells with four and two molecules, respectively.…”

Section: Si3n4 and Ge3n4mentioning

confidence: 99%

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Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO2, GeO2, Al 2O3, Si3N4, and Ge3N 4. Their important polymorphs are considered which are for SiO 2: α-quartz, α- and β-cristobalite and stishovite, for GeO2: α-quartz, and rutile, for Al2O 3: α-phase, for Si3N4 and Ge 3N4: α- and β-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving ab initio pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO2. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si3N4 and Ge3N4. © Springer Science+Business Media, LLC 2007

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Section: Si3n4 and Ge3n4mentioning

confidence: 99%

“…These nanocrystals are embedded in an insulating matrix which is usually chosen to be silica 4,5,6,7 . However, other wide bandgap materials are also employed such as germania 8,9 , silicon nitride 10,11,12 , and alumina 13,14,15 . As a matter of fact, the effect of different host matrices is an active research topic in this field.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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“…[6][7][8] Such potential applications have instigated extensive research and development efforts to create embedded nanoparticles to efficiently serve as charging and discharging islands. [9][10][11][12] Experimental techniques to form nanoparticles include oxidation, 13 wet etching, 14 scanning tunneling microscopy nano-oxidation, 15 atomic force microscopy, 16 focused ionbeam processing, 17 electron irradiation, 18 thermal annealing, 19 and selective chemical reaction. 5 Recently, threedimensionally confined nanoparticles embedded in insulating layers have been investigated for flash memory devices with nanofloating gates.…”

mentioning

confidence: 99%

Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

Kim

Shin

Lee

et al. 2007

Applied Physics Letters

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Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO2 layer. When a ZnO thin film on a p-type Si with amorphous SiOx interface layer is subjected to a 900°C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn2xSi1−xO2 layer is formed. Upon irradiation with a 300keV electrons, metallic and single crystal nanoislands of Zn with ∼7–10nm diameter were formed and embedded within the SiO2 interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.

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“…In the past, films based on nanogranular layers have been fabricated by using both semiconductors [1,2] and metals [3]. Several works have been dedicated to the study of the tunnel driven electrical conduction, in a direction perpendicular to the plane of the film [4][5][6]. In these works a layer of nanocrystals, embedded in an insulating material, is placed between two electrodes, used for current-voltage measurements.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Multimetal Granular Thin Films: How to Control Chaos

Pennelli

Nannini

2009

e-J. Surf. Sci. Nanotechnol.

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A simple method for the fabrication of films with an high density of nanometric metal grains is presented and discussed. The method is based on the successive evaporation of different metals (Au, Al and In), with different melting points: after each evaporation, rapid thermal annealing treatments are used to induce agglomeration of the deposited material. The nanograin agglomeration (in particular of the Al film) resulted strongly dependent on the previous nanograin (gold) distribution and concentration. Statistics of gold based nanograin films, deposited on silicon dioxide, are presented for different gold thickness and annealing parameters. Results on Al induced agglomeration of a successively evaporated thin film are shown for different Au nanoparticle distribution and concentration. A final indium deposition, with suitable annealing temperature and time, produces films with a very high density of metal nanoparticles (more than 2000 nanograins/µm 2 , average radius between 5 and 10 nm).

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Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Cited by 53 publications

References 11 publications

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer

Nanostructured Multimetal Granular Thin Films: How to Control Chaos

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