Memory and Transduction Prospects for Silicon 
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 Center Devices

Higginbottom, Daniel; Asadi, Faezeh Kimiaee; Chartrand, Camille; Ji, Jia-Wei; Bergeron, Laurent; Thewalt, M. L. W.; Simon, Christoph; Simmons, Stephanie

doi:10.1103/prxquantum.4.020308

Cited by 4 publications

(2 citation statements)

References 83 publications

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“…The properties of T-centers have already been investigated in SOI (silicon-on-insulator), which offers the appropriate layer structure for nanophotonic integration. − However, the T-center has a relatively long excited state lifetime of ∼1 μs (refs and ) compared to the lifetime of the G center (4–10 ns), ,, making it a dim emitter. Consequently, most research efforts have focused on collecting emission from the ensemble of the T-center ,,, or from the phonon sideband of a single T-center, which is 3.4 times brighter than the zero-phonon line . But the zero-phonon emission is particularly significant because it represents the coherent emission, which is essential for spin-photon entanglement and distribution of quantum information over longer distances .…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Single Photon Emission from a Silicon T-Center in a Nanobeam

Lee,

Islam,

Harper

et al. 2023

ACS Photonics

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Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T-center holds particular promise because it possesses a spin ground state that has long coherence times, but this color center exhibits a long excited state lifetime that results in a low-photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single-photon emission from a single T-center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to couple over 70% of the photons in the nanobeam directly into a single-mode fiber. This efficiency enables us to directly demonstrate single-photon emission from the zero-phonon line, which represents the coherent emission from the T-center. Our results represent an important step toward silicon-integrated spin–photon interfaces for quantum computing and quantum networks.

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Section: Introductionmentioning

confidence: 99%

High-Efficiency Single Photon Emission from a Silicon T-Center in a Nanobeam

Lee,

Islam,

Harper

et al. 2023

ACS Photonics

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“…G‐, W‐, T‐centers) and unknown defects [ 17,19–21,29,30 ] ; 2) photon coalescence [ 31 ] ; 3) spin control [ 32–34 ] ; 4) integration in photonic devices, such as Mie resonators, [ 22,34,35 ] integrated photonic circuits, [ 30,31,36 ] ring resonators, [ 37 ] and photonic crystals [ 38,39 ] providing Purcell effect; 5) position control of the emitters with localized ion implant [ 40 ] ; 6) coherent population trapping and Autler‐Townes splitting. [ 41 ]…”

Section: Introductionmentioning

confidence: 99%

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Ristori,

Khoury,

Salvalaglio

et al. 2023

Advanced Optical Materials

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Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.

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Cavity-Enhanced Emission from a Silicon T Center

Islam,

Lee,

Harper

et al. 2023

Nano Lett.

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Silicon T centers present the promising possibility of generating optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye−Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work, we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a 2 order of magnitude increase in the brightness of the zero-phonon line relative to waveguidecoupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way toward efficient spin−photon interfaces in silicon photonics.

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Memory and Transduction Prospects for Silicon T Center Devices

Cited by 4 publications

References 83 publications

High-Efficiency Single Photon Emission from a Silicon T-Center in a Nanobeam

High-Efficiency Single Photon Emission from a Silicon T-Center in a Nanobeam

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Cavity-Enhanced Emission from a Silicon T Center

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