A change of the input resistance (R in ) of the neuron involves a change in the membrane conductances by opening and closing of ion channels. In passive membranes, i.e., membranes with only linear leak conductances, the increase or decrease of these conductances leads to a decrease or increase of the R in and the membrane time constant (τ m ). However, the presence of subthreshold voltage dependent currents can produce non-linear effects generating deviations from this relationship, especially the contradictory effect of negative conductances, as produced by the sodium-persistent current (I NaP ), on the R in . In this work we aimed to analyze experimentally and theoretically the impact of the negative conductance produced by I NaP on R in . Experiments of whole-cell patch-clamp conducted in CA1 hippocampus pyramidal cells from brain slices showed a paradoxical voltage-dependent decrease of the R in and the τ m in subthreshold membrane potentials close to the firing threshold after the perfusion with TTX, which inhibits I NaP . This effect is postulated to be a result of the negative slope conductance in the subthreshold region produced by this conductance. The analysis of the experimental data, together with simulations found that the slope conductance of I NaP is negative for subthreshold membrane potentials and its magnitude is voltage dependent in the same range observed for the voltage-dependence of R in and τ m . The injection of an artificial I NaP using dynamic-clamp in the presence of TTX restored the R in and τ m to its original values.Additionally the injection of an artificial leak current with a negative conductance in the presence of TTX restored the R in and τ m as the artificial I nap did. On the other hand, the injection of an artificial leak current