MEM-FLASH non-volatile memory device for high-temperature multibit data storage

Singh, Pushpapraj; Arya, Dhairya Singh; Jain, Udit

doi:10.1063/1.5098135

Cited by 13 publications

(6 citation statements)

References 19 publications

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“…Nonvolatile random−access memory (RAM) based on FLASH, magnetic, phase−change, and resistive mechanisms degrade quickly even at moderate temperatures (<200 • C) [2][3][4][5]. Microelectromechanical (MEM) and nanogap resistance switching (NGS) offer promise for elevated temperatures NVM, but there are downsides with moving parts and operating in various atmospheres [6,7]. Ferroelectric technology based on perovskite or fluorite structures (e.g., Pb(Zr,Ti)O 3 or (Hf,Zr,Si)O 2 ) is currently limited to temperatures < 200 • C [8,9].…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

et al. 2022

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Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures >200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature, the largest hurdle comes at higher temperatures for conventional perovskite ferroelectrics. Here, we demonstrate how AlScN can enable high-temperature (>200 °C) nonvolatile memory. The c-axis textured thin films were prepared via reactive radiofrequency magnetron sputtering onto a highly textured Pt (111) surface. Photolithographically defined Pt top electrodes completed the capacitor stack, which was tested in a high temperature vacuum probe station up to 400 °C. Polarization–electric field hysteresis loops between 23 and 400 °C reveal minimal changes in the remanent polarization values, while the coercive field decreased from 4.3 MV/cm to 2.6 MV/cm. Even at 400 °C, the polarization retention exhibited negligible loss for up to 1000 s, demonstrating promise for potential nonvolatile memory capable of high−temperature operation. Fatigue behavior also showed a moderate dependence on operating temperature, but the mechanisms of degradation require additional study.

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Section: Introductionmentioning

confidence: 99%

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

et al. 2022

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“…By contrast, MEM-based data storage offers the promise of robust operation at high-temperatures as well as high-radiation levels with near zero standby power across all environmental conditions. However, to date, non-volatile memories either incorporate CMOS and charge storage [5] or focus on singular devices for proof of concept [6]- [9]. By contrast, this work uses a nonvolatile 7-terminal (7-T) rotational relay as the storage device [8], [9], and combines it with two 3-terminal (3-T) relays [10] to produce the first all MEM storage cell including read and write circuitry.…”

Section: Introductionmentioning

confidence: 99%

Fully Microelectromechanical Non-Volatile Memory Cell

Worsey

Kulsreshath

Tang

et al. 2023

2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS)

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This paper reports the first non-volatile memory cell composed entirely of MEM relays that does not need CMOS circuitry for reading or writing. The cell uses a 7-terminal non-volatile relay for information storage and two 3-terminal relays for read and write access. This three-relay cell has been fabricated and characterised to demonstrate read and write operations. The cell architecture has been designed such that multiple cells can be tiled in combination with a relay-based multiplexer to make a digital all MEM reprogrammable non-volatile memory. Such a memory will have near zero standby power and ability to operate in harsh environments beyond the capabilities of conventional memory technologies.

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“…Nanoelectromechanical (NEM) relays, by contrast, have zero sleep current, a steep subthreshold slope [1], [2], [3], [4], [5], [6], as well as the capability to operate at elevated temperatures [7] and radiation levels [8] where transistors either work suboptimally or not at all. Non-volatile operation of NEM relays has been demonstrated using a variety of designs and schemes, including charge storage in a floating gate to alter the pull-in voltage [9], [10], and stiction between contacting surfaces [11], [12], [13]. We recently demonstrated a stiction-based bistable NEM relay with a semicircular beam that eliminates electromechanical pull-in instability [14], allowing precise electrostatic control of the beam when switching between two stable states (please see Table 1 in [14] for a comparison between electrostatic nonvolatile relays).…”

Section: Introductionmentioning

confidence: 99%

Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

Pamunuwa

Worsey

Reynolds

et al. 2022

J. Microelectromech. Syst.

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Diverse areas such as the Internet-of-things (IoT), aerospace and industrial electronics increasingly require nonvolatile memory to work under high-temperature, radiationhard conditions, with zero standby power. Nanoelectromechanical (NEM) relays uniquely have the potential to work at 300 • C and absorb high levels of radiation, with zero leakage current across the entire operational range. While NEM relays that utilise stiction for non-volatile operation have been demonstrated, it is not clear how to design a relay to reliably achieve given programming and reprogramming voltages, an essential requirement in producing a memory. Here, we develop an analytical, first-principle physics-based model of rotational NEM relays to provide detailed understanding of how the programming and reprogramming voltages vary based on the device dimensions and surface adhesion force. We then carry out an experimental parametric study of relays with a critical dimension of ≈80 nm to characterise the surface adhesion force, and derive guidelines for how a NEM relay should be dimensioned for a given contact surface force, feature size constraints and operating requirements. We carry out a scaling study to show that voltages of ≈1 V and a footprint under ≈2 µm 2 can be achieved with a critical dimension of ≈10 nm, with this device architecture.

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MEM-FLASH non-volatile memory device for high-temperature multibit data storage

Cited by 13 publications

References 19 publications

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

Fully Microelectromechanical Non-Volatile Memory Cell

Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

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