2008
DOI: 10.3938/jkps.52.1540
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MEH-PPV/CdS Nanorod Polymer Solar Cells

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Cited by 18 publications
(12 citation statements)
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“…CdS has been fascinating researchers with the variety of morphologies and range of promising device applications. The wide band gap of 2.48 eV and excellent optical transmittance makes CdS a promising material in fabrication of solar cell [1][2][3][4], flat panel display, nanopiezoelectrical devices [5,6], window layer material [7], field effect transistors [8], gas sensing application [9], light emitting diode [10] etc. The CdS thin films can be deposited by various methods including vacuum deposition [11], spray pyrolysis [12], electro deposition [13] etc.…”
Section: Introductionmentioning
confidence: 99%
“…CdS has been fascinating researchers with the variety of morphologies and range of promising device applications. The wide band gap of 2.48 eV and excellent optical transmittance makes CdS a promising material in fabrication of solar cell [1][2][3][4], flat panel display, nanopiezoelectrical devices [5,6], window layer material [7], field effect transistors [8], gas sensing application [9], light emitting diode [10] etc. The CdS thin films can be deposited by various methods including vacuum deposition [11], spray pyrolysis [12], electro deposition [13] etc.…”
Section: Introductionmentioning
confidence: 99%
“…This result indicates that the barrier height is increased by 120 meV by means of the TiO 2 interlayer. This can be attributed to the TiO 2 interlayer can modify the barrier height by the effect of the space charge region of the diode [16][17][18]. Herewith, TiO 2 film forms a physical barrier between perylene-66 and p-Si substrate due to its high dielectric constant, low leakage current density, large band gap, substantial conduction band offset, and high breakdown strength.…”
Section: Dark I-v Characteristicsmentioning
confidence: 97%
“…Series resistance, R S , and shunt resistance, R sh can be approximated from J-V under forward and reverse bias. For an ideal diode barrier, R S and R sh should be close to zero and infinity, respectively [16]. Table 1 listed the calculated values of R S and R sh of the two diodes.…”
Section: Dark I-v Characteristicsmentioning
confidence: 99%
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“…CdS and Bi 2 S 3 received great importance due to their potential application in conversion of solar energy into electrical energy. Excellent absorbance, high optical transparency rank them as promising candidates for optical as well as electric applications like solar cell fabrication (Thanachayanont et al, 2008;Sasikala et al, 2000), photosensor (Pouzet et al, 1992) and thermoelectric power (Curran and Phillippe, 1982;Ghosh and Varma, 1979). Few reports are available on preparation and characterization of as-deposited CdS-Bi 2 S 3 composite thin film (Dipalee et al, 2012).…”
Section: Introductionmentioning
confidence: 99%