Medium‐range order in a‐Si:H films prepared from hydrogen diluted silane

Vavruňková, Veronika; Elzakker, G. van; Zeman, Miro; Šutta, P.

doi:10.1002/pssa.200982759

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…Note that the calculated crystallite sizes are only an average rough estimation as the procedure for calculating this is more convenient for crystallites much larger than 10 nm [36]. Figure 9 shows the transmission electron microscopy TEM measurements for the 20-nm ASL sample after annealing.…”

Section: X-ray Diffraction Resultsmentioning

confidence: 97%

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Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

Agbo

Calta

Šutta

et al. 2014

Physica Status Solidi (a)

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We report the investigation of the formation phases of silicon nanostructures obtained from thermal annealing of hydrogenated amorphous silicon (a-Si:H)-based multilayers using in situ X-ray diffractometry, XRD. The multilayers composed of alternating layers of a-Si:H and silicon oxide were deposited on [100]-oriented crystalline silicon substrates using a plasmaenhanced chemical vapor deposition. Our results indicate that crystallization only starts after hydrogen effusion at a 500 8C annealing temperature, independent of the a-Si:H sublayer thickness. Hydrogen effusion results in the reordering of the silicon structure from the tetragonal to the diamond structure, while the films maintain their amorphous medium-range order.The onset of crystallization and phase separation occur at different annealing temperatures depending on the a-Si:H sublayer thickness. The fraction of the crystallized nanostructure are found to also depend on the a-Si:H sublayer thickness. Phase separation and formation of silicon nanostructures is observed by the shift of the SiO stretching vibration to higher wave numbers in the Fourier transform infrared (FTIR) absorption spectra. The different crystallization phases as observed with in situ XRD will be corroborated by measurements from Raman and FTIR spectroscopies. The crystallite size obtained from XRD compares well with that obtained from transmission electron microscopy.

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Section: X-ray Diffraction Resultsmentioning

confidence: 97%

“…Note that the calculated crystallite sizes are only an average rough estimation as the procedure for calculating this is more convenient for crystallites much larger than 10 nm .…”

Section: Resultsmentioning

confidence: 99%

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

Agbo

Calta

Šutta

et al. 2014

Physica Status Solidi (a)

Self Cite

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“…The information related to the MRO scale (3-6 Å to as high as 15-25 Å 20,27-30 ) were obtained by XRD linewidth analysis of the full-width-at-half-maximum (FWHM) of the lowest angle x ray scattering peak. 1,[31][32][33] The FWHM was computed by fitting the first diffraction peak of a-Si:H spectra. 1,29,32,33 The FWHM usually varied between 5 and 6 for all of a-Si:H samples.…”

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In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Sharma

Verheijen

Sanden

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The impact of the amorphous silicon properties, i.e., the microstructure parameter R* and the medium range order (MRO), on the crystallization process is highlighted and discussed. In agreement with literature, the development of large grains extending through the thickness of the poly-Si layer is found to be promoted by an increase in the amorphous silicon microstructure parameter, R*. Furthermore, while the role of the MRO in controlling the incubation time and, therefore, the onset in crystallization is generally acknowledged, it is also concluded that the presence of nano-sized voids plays an essential role in the crystallization kinetics.

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Effects of H2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system

Hsieh

Huang³

et al. 2013

Thin Solid Films

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Medium‐range order in a‐Si:H films prepared from hydrogen diluted silane

Cited by 6 publications

References 13 publications

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

Investigation of the transition phases from amorphous silicon‐based multilayers to silicon nanostructures by in situ X‐ray diffraction

In situ crystallization kinetics studies of plasma-deposited, hydrogenated amorphous silicon layers

Effects of H2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system

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