2004
DOI: 10.1021/ie0305972
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Mechanistic Study of Surface Contamination of Dielectric Oxides Using Isotope Labeling

Abstract: Surface molecular contamination of gate dielectrics in metal oxide semiconductor structures is a problem affecting the performance of integrated circuits. The impact depends strongly on the nature of the interactions between the contaminants and the dielectric surfaces. The mechanism of interactions of moisture and isopropyl alcohol (IPA) with SiO 2 and ZrO 2 films was studied using isotope labeling with deuterium oxide (D 2 O). The results revealed that H 2 O adsorbs in a random multilayer configuration with … Show more

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Cited by 3 publications
(1 citation statement)
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“…Herein, the difference in Δ d corresponds to different functional groups on the substrate surface. For cleaning 1 substrate, the dehydration between the surface OH group and 2-propanol occurred during ultrasonication in 2-propanol, thus decreasing the number of surface OH groups with increasing number of 2-propyl groups. , The 2-propyl groups on the substrate surface may have a high affinity with three 2-propyl groups in TIPS pentacene molecules, resulting in higher orientation of the molecules in the organic thin film (Figure B). These positive interactions were directly observed at lower contact angles (Δ d < 0).…”
Section: Resultsmentioning
confidence: 99%
“…Herein, the difference in Δ d corresponds to different functional groups on the substrate surface. For cleaning 1 substrate, the dehydration between the surface OH group and 2-propanol occurred during ultrasonication in 2-propanol, thus decreasing the number of surface OH groups with increasing number of 2-propyl groups. , The 2-propyl groups on the substrate surface may have a high affinity with three 2-propyl groups in TIPS pentacene molecules, resulting in higher orientation of the molecules in the organic thin film (Figure B). These positive interactions were directly observed at lower contact angles (Δ d < 0).…”
Section: Resultsmentioning
confidence: 99%