Mechanistic insights of Sn-based non-chemically-amplified resists under EUV irradiation

Belmonte, Guilherme Kretzmann; Cendron, Suelen Weimer; Reddy, Pulikanti Guruprasad; Moura, Cleverson A. S.; Moinuddin, Mohamad G.; Peter, Jerome; Sharma, Satinder K.; Lando, Gabriela Albara; Puiatti, Marcelo; Gonsalves, Kenneth E.; Weibel, Daniel Eduardo

doi:10.1016/j.apsusc.2020.146553

Cited by 17 publications

(11 citation statements)

References 57 publications

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“…It is consistent with the results obtained by XPS. Similar results were also reported by Gonsalves et al, confirming the decomposition of the triflate moiety under EUV or electron beam exposure. ,− The reduction of the absorption bands at 1450 and 3000–3100 cm –1 , which are assigned to the stretching of the phenyl moiety, indicates the loss of the phenyl groups. This may be due to the photolysis of triphenyl sulfonium in the PSTS 0.7 film during exposure and development.…”

Section: Resultssupporting

confidence: 85%

“…Low-molecular-weight species, such as benzene and diphenyl sulfide, volatilized or dissolved during exposure and development. In addition, the anionic triflate was decomposed into SO 2 + , SO + , and CF 3 + fragments during irradiation. ,− The decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene results in the significant solubility switch of the exposed and unexposed resist films. The developer used to selectively remove the resist in the unexposed area generates a negative pattern.…”

Section: Resultsmentioning

confidence: 99%

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Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Wang

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene (PSTS) were prepared by a facile method of modification of polystyrene with sulfonium groups. The uploading of the sulfonium group can be well-controlled by changing the feed ratio of raw materials, resulting in PSTS0.5 and PSTS0.7 resists with sulfonium ratios of 50 and 70%, respectively. The optimum developer (methyl isobutyl ketone/ethanol = 1:7) is obtained by analyzing contrast curves of electron beam lithography (EBL). PSTS0.7 exhibits a better resolution (18 nm half-pitch (HP)) than the PSTS0.5 resist (20 nm HP) at the same developing conditions for EBL. This novel resist platform was further evaluated by extreme ultraviolet lithography, and patterning performance down to 13 nm HP at a dose of 186 mJ cm–2 with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Wang

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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“…Therefore, the exposed area becomes nonpolar whereas the unexposed area remains polar, which eventually leads to polarity switching and becomes the basis of pattern development in polar developer such as TMAH and behaves as a negative resist. The change from polar to nonpolar nature upon exposure is largely due to decomposition of triflet and sulfonium units of MAPDST leading to conversion of polar MAPDST microstructure to a nonpolar thio-ether type microstructure. , That the MAPDST microstructure undergoes decomposition upon exposure is also evident when one compares the FTIR spectra of unexposed and exposed resists (Figure S13). The fingerprint region of MAPDST microstructure is strongly affected by the e-beam exposure indicating the decomposition of this microstructure.…”

Section: Resultsmentioning

confidence: 99%

“…A recent report on the mechanistic aspects of sulfonium and triflate decomposition of MAPDST microstructure upon exposure with EUV photon also demonstrates the same. 12 The postexposure bake is employed mainly to ensure completion of all possible chemical reaction processes that are initiated during e-beam or helium ion beam exposure.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…There have been many different ways to improve resist performance through structure engineering. Among several approaches that have been adopted by different research groups across the globe to improve resist performance in terms of sensitivity and resolution, incorporation of inorganics or organohalo-functionality into resist architecture has been very successful. − Integration of inorganics into a resist network has helped in improving resolution, etch resistance, and sensitivity. , In recent times, metal–organic materials (both molecular and macromolecular) have been found to be quite promising resist systems in the current scenario of advanced IC technology. − Similarly, incorporation of halogens into the resist matrix has been very successful in developing high performance resists with improved properties. To mention a few, Wilson and co-workers reported the positive impact of the inclusion of fluorinated functionality in resist architecture on the backbone-scission efficiency and sensitivity .…”

Section: Introductionmentioning

confidence: 99%

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Organoiodine Functionality Bearing Resists for Electron-Beam and Helium Ion Beam Lithography: Complex and Sub-16 nm Patterning

Yogesh

Moinuddin

Chauhan

et al. 2021

ACS Appl. Electron. Mater.

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Given the current need for resist materials for patterning transistors with ultralow nodes, there has been a quest for developing resists with improved performance for nanoscale patterning with good contrast. The present work demonstrates polymeric resists (MAPDST-TIPMA) developed through the integration of a radiation-sensitive monomer (MAPDST) with an organoiodine functionality (TIPMA) for sub-16 nm patterning using electron-beam and helium ion beam lithography. The structural integrity was established by several spectroscopic techniques particularly NMR, FTIR, XPS, and GPC. These polymeric resists possess weight-average molecular weight (M w) in the range of 10000–12000 with low PDI. While the resists 3a and 3b were synthesized with feed ratios of 80:20 and 70:30 of the monomers MAPDST and TIPMA, respectively, the actual microstructure compositions were calculated, using XPS and GPC data, to be ∼94:6 and 91:9, respectively. The present resists have the potential for patterning 16 nm line/space features when exposed to e-beam. Also, 15 nm features were successfully patterned using MAPDST-TIPMA resists. The line edge roughness (LER) and line width roughness (LWR) of the 20 nm L/3S features were calculated to be 2.48 and 3.6 nm, respectively. Moreover, complex nanofeatures of different shapes were successfully patterned using 3b. A critical analysis of nanofeatures using AFM revealed that the patterns are very well developed with a sharp wall profile. The normalized resist thickness (NRT) curve was established to evaluate the sensitivity of the present resist which was calculated to be 341 μC/cm2 at 20 keV. The nature and slope of the NRT curve indicated that MAPDST-TIPMA is a negative tone resist with good contrast. Finally, the resist was found to be highly sensitive to He+ beam (sensitivity ∼6.21 μC/cm2) resulting in 20 nm L/S as well as 15 nm features with a good wall profile.

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Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

Luo

Liu

et al. 2023

Applied Organom Chemis

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The fineness of the photolithographic pattern depends largely on the composition and structure of the photoresist, and different structures endow metal‐based photoresists with different photon‐absorbing capabilities. Here, we synthesized zinc‐based photoresists with different electron‐effect substituents (amine and bromine) in the ligands and investigated the influence of the ligand groups on the sensitivity and resolution at deep ultraviolet and electron beam. The developed resist patterns exhibit that the sensitivity of the Zn‐based photoresists containing bromine groups (Zn‐PBBA) is nearly seven times higher than the Zn‐based photoresists containing amine groups (Zn‐PABA) at the same resolution under ultraviolet irradiation, which is supported by the density functional theory (DFT) calculations where a smaller HOMO–LUMO gap for Zn‐PBBA is obtained. Analogously, the Zn‐PBBA also showed better sensitivity and resolution than Zn‐PABA at EBL, with a resolution of 70 nm at a dose of 800 mJ cm−2 by characterization with AFM. This work provides an understanding of the efficient structural design of photoresists and future guidance for the development of better‐performing materials.

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Mechanistic insights of Sn-based non-chemically-amplified resists under EUV irradiation

Cited by 17 publications

References 57 publications

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Organoiodine Functionality Bearing Resists for Electron-Beam and Helium Ion Beam Lithography: Complex and Sub-16 nm Patterning

Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

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