Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Kwok, Charlotte T. M.; Braatz, Richard D.; Paul, S.; Lerch, W.; Seebauer, Edmund G.

doi:10.1063/1.3079524

Cited by 14 publications

(6 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, even though the faster ramping of millisecond annealing pushes up the cluster dissociation temperatures, the maximum Si interstitial concentrations still greatly exceed those for spike annealing. The benefits from millisecond annealing derive from the shortened time scale that outweighs the effects of increased Si interstitial concentration (1). Simulations for implanted boron show that, although the characteristic rate for kicking dopant out of the lattice is almost two orders of magnitude larger for millisecond annealing than for spike annealing (due mainly to the higher interstitial concentration), the corresponding time scale in millisecond annealing is almost three orders of magnitude smaller.…”

Section: Annealingmentioning

confidence: 97%

(Invited) Defect Engineering at the Nanoscale: Challenges and Trends

Seebauer¹,

Gorai²

2013

ECS Trans.

View full text Add to dashboard Cite

Progression of Si-based device processing ever deeper into nanoscale dimensions is creating stiffer challenges for the control and manipulation of atomic-scale defects. For example, the increasing use of multiple chemical elements creates a much more complicated network of defect reactions. The growing surface-to-volume ratios that stem from device shrinkage accentuate the importance of defect interactions with surfaces and interfaces, even though the understanding of these interactions remains in embryonic stages. And previously unrecognized effects of temperature on defect creation during ion implantation, as well as of photostimulated defect diffusion during annealing, manifest themselves more clearly in the nanoscale regime. The present work briefly describes these phenomena, and makes the case that modeling of defect behavior through a combination of quantum calculations, molecular dynamics, Monte Carlo, and continuum simulations - coupled with appropriate experiments - has become ever more integral to effective defect engineering.

show abstract

Section: Annealingmentioning

confidence: 97%

(Invited) Defect Engineering at the Nanoscale: Challenges and Trends

Seebauer¹,

Gorai²

2013

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…PA is practically stopped when it reaches an acceptable level. If normal rapid thermal annealing (RTA) is used, PA requires a longer annealing time  a above 1 ms (Kwok et al, 2009;Race, 2010) and a higher annealing temperature T a above approximately 10 3 K. However, studies on methods that could practically replace traditional RTA are still ongoing (Larson, Williams, & Current, 2011). For example, microwave (Thompson et al, 2005) and pulsed-laser beams (Jones, Kuryliw, Murto, Rendon, & Talwar, 2000) have been proposed to shorten  a , and a cluster beam (Tanjo & Naito, 2011b) has been proposed to reduce T a .…”

Section: The Necessity Of the Post-annealingmentioning

confidence: 99%

“…Such an acceptable level is characterized in two ways. One criterion for ion implantation is that the density of the activated dopant, measured by sheet resistance (Kwok et al, 2009), should approach a maximum level of 10 17 /cm 3 -10 21 /cm 3 , which is acceptable. For example, if used a B 18 beam with an impact energy of E 0 = 337 eV/ (B atom) into a crystalline Si (c-Si) (Onoda et al, 2010) with a conventional fluence of approximately 10 15 /cm 2 , this density corresponds to a state in which approximately 30% of the dopant is substituted at lattice sites.…”

Section: The Characterization Of the Post-annealingmentioning

confidence: 99%

New Phonon Dynamics in a Diamond Crystal during Post-Annealing

Nakagawa

2013

JMSR

View full text Add to dashboard Cite

A new mesoscopic response in a crystal during post-annealing (PA) after ion implantation has been discovered. PA is an indispensable procedure for activating the implanted dopant center by retrieving the lost crystallinity of the host crystal, which usually elapses over periods longer than a few milliseconds. By using an empirical molecular-dynamics simulation, we examined what actually happened during extended PA for up to one nanosecond in case of sub-keV N₂ beam implantation into bulk diamond at room temperature with annealing at 1000 K. While observing the changes in the long-range-order (LRO) parameter, a notable phase transition from the crystalline to the amorphous state (CA transition) occurred synergistically at approximately a few picoseconds (ps). After the CA transition, PA was initiated. A few tens of ps later, a sequence of restoration spikes was observed in LRO parameter with a regular time interval of 70–80 ps. Each sharp peak showed the spontaneous restoration of “amorphous -> crystal -> amorphous” transitions. This process may trigger a “critical state” that occurs during the slow and steady recovery of the lost crystallinity in the early stages of PA. It was found that annealing not only enhances the vibration amplitude of the individual atoms in the bulk but also causes phonon-assisted restoration in a mesoscopic space.

show abstract

“…FLA thereby achieves annealing times comparable to the duration of the flash pulse -in the millisecond frame (Gebel et al, 2002). The mechanistic details of MA techniques, such as FLA, have been understood only recently (Kwok et al, 2009). Such methods reduce unwanted dopant spreading by greatly reducing the time for diffusion, which over-compensates for an increased concentration of Si interstitials that promote dopant spreading.…”

Section: Rtp Schemesmentioning

confidence: 99%