Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors

Volkov, A. N.; Andreev, D. V.; Maslovsky, Vladimir M.

doi:10.1007/978-981-13-6133-3_34

Lecture Notes in Mechanical Engineering

2019

DOI: 10.1007/978-981-13-6133-3_34

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Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors

A. N. Volkov¹,

D. V. Andreev²,

Vladimir M. Maslovsky³

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Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors

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References 12 publications

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