1994
DOI: 10.1103/physrevb.49.2230
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Mechanisms of exchange interactions between carriers and Mn or Eu spins in lead chalcogenides

Abstract: A microscopic tight-binding model of the spin-dependent coupling between efFective-mass electrons and localized spins in the IV-VI diluted magnetic semiconductors is proposed. Contributions from the direct Coulomb exchange as well as from the hybridization between band states and resonant levels associated with magnetic ions are taken into consideration. The exchange integrals are evaluated quantitatively and are shown to compare favorably with experimental values for both the Mnand the Eu-based compounds. Som… Show more

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Cited by 61 publications
(42 citation statements)
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“…The small magnitude of the sp-f exchange integrals in IV-VI semiconductors is also confirmed by the results of the early electron paramagnetic resonance (EPR) work by Sperlich and Urban [17]. The current understanding of the physical origin of this coupling is discussed by Dieti et al [18].…”
Section: Iv-vi Semiconductors With Eu and With Ybsupporting
confidence: 54%
“…The small magnitude of the sp-f exchange integrals in IV-VI semiconductors is also confirmed by the results of the early electron paramagnetic resonance (EPR) work by Sperlich and Urban [17]. The current understanding of the physical origin of this coupling is discussed by Dieti et al [18].…”
Section: Iv-vi Semiconductors With Eu and With Ybsupporting
confidence: 54%
“…The one-dimensional model is not suited to represent quantitatively any real three-dimensional superlattice, still we chose the parameters as to reproduce the energy gaps and the width of the bands of PbTe and EuTe (en = 0, em, = 1.8 eV, eA = -0.2 eV, α = 1.5 eV). Also the values J = 0.35 eV and JA = 0.08 eV are chosen to be of the order expected for the direct and kinetic exchange for f-shell atoms in PbTe [6]. The essential features of the obtained results are as follows:…”
Section: Institute Of Physics Polish Academy Of Sciencesmentioning
confidence: 90%
“…The investigations of magnetic and magnetooptical properties of Mn-based IV-VI semimagnetic semiconductors provided a solid evidence for the existence of the sp-d exchange interaction between the system of local magnetic moments of Mn ions and the system of free carriers with the exchange integral J s d of the order of 50-100 meV [6][7][14][15].…”
Section: Mn-based Iv-vi Semimagnetic Semiconductorsmentioning
confidence: 99%