Mechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector doping

Jovanović, V. D.; Indjin, D.; Vukmirović, Nenad; Ikonić, Z.; Harrison, P.; Linfield, E. H.; Page, H.; Marcadet, X.; Sirtori, Carlo; Worrall, C.; Beere, Harvey E.; Ritchie, D. A.

doi:10.1063/1.1937993

Cited by 69 publications

(53 citation statements)

References 16 publications

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“…3.11, the characteristic temperature reaches a minimum value for a laser with a moderate carrier density of n e = 4 × 10 11 cm −2 . The threshold current density increases steadily with increasing carrier density, which has also been reported in [42]. The obtained results are comparable to measured light output-to-current characteristics of quantum cascade lasers [cf.…”

Section: Laser Simulationssupporting

confidence: 78%

THz quantum cascade lasers for standoff molecule detection.

Chow¹,

Wanke²,

Lerttamrab³

et al. 2007

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Remote optical detection of molecules, agents, and energetic materials has many applications to national security interests. Currently there is significant interest in determining under what circumstances THz frequency coverage will aid in a complete sensing package. Sources of coherent THz frequency (i.e. 0.1 to 10 THz) electromagnetic radiation with requisite power levels, frequency agility, compactness and reliability represent the single greatest obstacle in establishing a THz technology base, but recent advances in semiconductor-based quantum cascade lasers (QCLs) offer huge improvements towards the ultimate THz source goals. This project advanced the development of narrow-linewidth THz quantum cascade lasers. We developed theoretical tools to guide the improvement of standard THz quantum cascade lasers, the investigation of nonlinear optics employing infrared QCLs, and the exploration of quantum coherence to improve QCL performance. The latter was aimed especially towards achieving high temperature operation. In addition we developed a computer algorithm capable of shifting the frequencies of an existing THz QCL to a different frequency and invented a new type of laser that may enable room temperature THz generation in a electrically driven solid-state source. 3 AcknowledgmentMany people contributed to this project. In no particular order I would like to thank

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Section: Laser Simulationssupporting

confidence: 78%

THz quantum cascade lasers for standoff molecule detection.

Chow¹,

Wanke²,

Lerttamrab³

et al. 2007

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“…Recently, it has been argued that in a particular QCL design "optimal" injector doping is suggested to be between 6 ϫ 10 11 and 8 ϫ 10 11 cm −2 in order to achieve significant gain and at the same time avoid the considerable increase in the threshold current. 55 The theoretical model together with the experimental and numerical analysis presented above clearly show that doping density variations can play an important role in design and optimization of future high-performance QCL devices. This includes reduction of the threshold current and prolonged operation before saturation.…”

Section: Resultsmentioning

confidence: 99%

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

Jovanović

Höfling

Indjin

et al. 2006

Journal of Applied Physics

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A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/ AlGaAs quantum cascade lasers is presented. The employed theoretical model of electron transport was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance equations. Three different devices with injector sheet doping densities in the range of ͑4 -6.5͒ ϫ 10 11 cm -2 have been grown and experimentally characterized. Optimized arsenic fluxes were used for the growth, resulting in high-quality layers with smooth surfaces and low defect densities. A quasilinear increase of the threshold current with sheet injector doping has been observed both theoretically and experimentally. The experimental and calculated current-voltage characteristics are in a very good agreement. A decrease of the calculated coupling constant of average electron temperature versus the pumping current with doping level was found.

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“…These include Monte Carlo simulations [26][27][28][29], self-consistent rate equations [30,31], as well as the nonequilibrium Green's function formalism [32,33]. As was shown above, the quantum cascade lasers (QCL's) are fabricated by stacking up alternating layers of semiconducting material with nanoscale thicknesses.…”

Section: Methods Of Calculationsmentioning

confidence: 99%

Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures

Zellat¹,

Soudini²,

Cheikh³

2013

AMPC

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This paper reviews the basic properties of the SiGe alloy, presents some new results on its electronic and optical properties, and discusses the approach that has been followed to model quantum wells containing SiGe layers for applications in quantum cascade lasers. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schrödinger equation. The calculations of optical parameters are used to optimize the Si/SiGe quantum cascade structures. Our results are found to be in good agreement with other calculations.

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Mechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector doping

Cited by 69 publications

References 16 publications

THz quantum cascade lasers for standoff molecule detection.

THz quantum cascade lasers for standoff molecule detection.

Influence of doping density on electron dynamics in GaAs∕AlGaAs quantum cascade lasers

Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures

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