Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic C<sub>GD</sub> Hysteresis for Hard-Switching Superjunction MOSFETs

Kang, Hoyoul; Findlay, E. M.; Udrea, F.

doi:10.1109/ted.2020.2989741

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…1(a). 67 The gate current (I G ) is consisting of the gate-to-source (I GS ) 68 and gate-to-drain (I GD ) current, respectively [9], [10],…”

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confidence: 99%

Trench Split Gate MOSFET’s Inductive Switching

Kang¹

2022

IEEE Trans. Electron Devices

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A trench split gate metal-oxidesemiconductor field-effect transistor (MOSFET) inductive switching is analyzed by adopting six-terminal method. Owing to the buried source terminal in the trench oxide, conventional three-terminal (gate, source, and drain) analysis has a limitation for investigating the detailed time-dependent current flow in the drift region, channel, as well as each terminal. However, a mixed-mode simulation tools enable us to look into the complicated current flow mechanisms in the device by dividing the gate terminal into the gate-to-source and the gate-to-drain terminals and the source terminal into the n+, the p+, and the shielded source terminals. The six-terminal method enables us to understand the fundamental turn-on and turn-off switching mechanisms that we have not found out so far from the measurement. Index Terms-Inductive switching, medium voltage, power metal-oxide-semiconductor field-effect transistors (MOSFETs), split gate. I. INTRODUCTION M EDIUM voltage power metal-oxide-semiconductor field-effect transistors (MOSFETs) have been mainly targeted at dc-dc power supplies, and ac-dc converters [1]-[3]. To reduce the specific resistance (R sp ) and the breakdown voltage (BV) by enhancing the drift region's doping concentration, the depth of the trench gate structure was prolonged toward the deep drift region. The poly gate in the deep trench helps the drift region to form a trapezoidal electric field shape acting as a field plate. Although the poly gate below the channel (in the deep trench) is surrounded by relatively thick oxide which would be able to lower the parasitic capacitance value, the gate-to-drain capacitance (C GD.Sh ) will not be ignorable owing to the large shielded area [1]. For this reason, the poly field plate is separated from the poly gate by a thick oxide (split-gate) and it is connected to the source terminal instead of the gate as shown in Fig. 1(a). Therefore, a split-

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“…1(a). 67 The gate current (I G ) is consisting of the gate-to-source (I GS ) 68 and gate-to-drain (I GD ) current, respectively [9], [10],…”

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confidence: 99%

Trench Split Gate MOSFET’s Inductive Switching

Kang¹

2022

IEEE Trans. Electron Devices

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“…Since the n-CS (charge storage) region is connected to the drain side, the boundary between the GE and the GC contacts must be the interface between the p-well and the n-CS. The five-contact method will be able to provide a detailed switching mechanism, negative capacitance during the turn-on, and a deeper understanding than the conventional three contacts [19], [20], [21]. Specifically, the gate contact consists of the gate-to-emitter contact, GE, and the gate-to-collector contact, GC.…”

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confidence: 99%

IGBT Reverse Transfer Dynamic Capacitance

Kang¹

2022

IEEE Trans. Electron Devices

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Small-signal capacitance in every datasheet of insulated gate bipolar transistor (IGBT) is not accurate for understanding IGBT's switching because the bipolar current in the device creates abnormal depletion profiles. IGBT's reverse transfer dynamic capacitance is extracted for the first time with a five-contact method. While small-signal capacitance does not allow any current flow in the drift region due to the ground gate, the dynamic capacitance is the output of the time-dependent bipolar carriers during the inductive switching. For this reason, the magnitude and the shape of the dynamic capacitance are quite different from the small-signal capacitance found in most of the commercial datasheet. The discrepancy between the dynamic C GC and the small-signal C GC raises a fundamental question of whether the small-signal C GC in the datasheet is useful for considering the device's dynamic performance.

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Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

Kang¹,

Udrea

2023

Power Electronic Devices and Components

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Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic C_GD Hysteresis for Hard-Switching Superjunction MOSFETs

Cited by 4 publications

References 12 publications

Trench Split Gate MOSFET’s Inductive Switching

Trench Split Gate MOSFET’s Inductive Switching

IGBT Reverse Transfer Dynamic Capacitance

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

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Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs

Cited by 4 publications

References 12 publications

Trench Split Gate MOSFET’s Inductive Switching

Trench Split Gate MOSFET’s Inductive Switching

IGBT Reverse Transfer Dynamic Capacitance

Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor

Contact Info

Product

Resources

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Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic C_GD Hysteresis for Hard-Switching Superjunction MOSFETs