Mechanisms and kinetics of the thermal decompositions of trichlorosilane, dichlorosilane, and monochlorosilane

Walker, K. L.; Jardine, R. E.; Ring, M. A.; O’Neal, H. E.

doi:10.1002/(sici)1097-4601(1998)30:1<69::aid-kin9>3.0.co;2-s

Cited by 41 publications

(47 citation statements)

References 25 publications

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“…The G3(CC) prediction of 81.6 kJ/mol for SiH 2 is slightly lower than the spectroscopic determination, while being in better agreement with the photoionization study. The increased S-T separations of 81.6 to 140.0 to 225.1 kJ/mol for SiH 2 , SiHCl, and SiCl 2 at G3(CC) level are in accordance with the decreased reactivity, e.g., the increased barrier heights from −2 to 64 to 164 kJ/mol for their insertion to H 2 at CCSD(T)/CBS level [108], and the increasing barrier height and the decreasing A-factor from insertions of SiHCl and SiCl 2 to H 2 from kinetics study [109].…”

Section: Silylene Radicalssupporting

confidence: 71%

Halogenated silanes, radicals, and cations: Theoretical predictions on ionization energies, structures and potential energy surfaces of cations, proton affinities, and enthalpies of formation

Wang¹,

He²

2008

International Journal of Mass Spectrometry

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Section: Silylene Radicalssupporting

confidence: 71%

Halogenated silanes, radicals, and cations: Theoretical predictions on ionization energies, structures and potential energy surfaces of cations, proton affinities, and enthalpies of formation

Wang¹,

He²

2008

International Journal of Mass Spectrometry

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“…The first Cl ligand is very influential into inhibiting polysilicon nucleation. This finding suggests that either dislocations of some crystallographic facet other than {100} activates a secondary decomposition mechanism of MCS which would be consistent with Walker's report on MCS thermal decomposition, (5).…”

Section: Intrinsic Si Epitaxysupporting

confidence: 90%

“…The chlorosilane thermal decomposition has been investigated both experimentally and theoretically, (5,6). SiHCl is the main decomposition intermediate of MCS pyrolysis while SiH 2 and SiCl 2 are the SiH 4 and DCS intermediates respectively.…”

Section: Monochlorosilanementioning

confidence: 99%

Monochlorosilane for Low Temperature Silicon Epitaxy

Tomasini¹,

Weeks²

2010

ECS Trans.

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Silane (SiH4) and dichlorosilane (DCS) are currently the precursors of choice for the vapor phase epitaxy of silicon at low temperatures (T < 1000 C). Device innovation is pushing down process thermal budgets to the extent that it becomes apparent that in the near future SiH4 and DCS will face challenges in maintaining high growth rates and achieving selectivity at low temperatures. New precursors that produce high growth rates at low deposition temperatures (< 650 C) are needed for advanced epitaxial applications such as recessed source/drain stressors, p-Metal Oxide Semiconductor channel and elevated source/drain structures. In this work, monochlorosilane (MCS) is investigated for the deposition of Si thin films such as blanket Si:P, selective epitaxial Si and Si1-xCx:P. MCS brings a substantial improvement in selective epitaxial silicon growth rate and HCl consumption as compared to DCS.

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“…Both cases should be considered to completely describe the film growth. According to computational chemistry calculations 10,11 and experiments, 12 …”

Section: Model and Comparison With Experimentsmentioning

confidence: 99%