1997
DOI: 10.1016/s0925-9635(96)00623-1
|View full text |Cite
|
Sign up to set email alerts
|

Mechanism of surface smoothing of diamond by a hydrogen plasma

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

1
18
2

Year Published

1998
1998
2015
2015

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 52 publications
(21 citation statements)
references
References 18 publications
1
18
2
Order By: Relevance
“…Further H-plasma treatment leads to an additional roughness enhancement by another factor of ten up to 40 nm rms , although only a layer of about 110 nm is removed by the plasma exposure. The discrepancy between our experiments and those reported in [4,5] might well be due to some different experimental conditions, such as plasma density and/or exposure time. On the other hand, our results are corroborated by Lee and Badzian [8], who have studied the morphology of etched substrates and homoepitaxial diamond films in relation to the miscut angles of the substrates.…”
Section: Discussioncontrasting
confidence: 99%
See 1 more Smart Citation
“…Further H-plasma treatment leads to an additional roughness enhancement by another factor of ten up to 40 nm rms , although only a layer of about 110 nm is removed by the plasma exposure. The discrepancy between our experiments and those reported in [4,5] might well be due to some different experimental conditions, such as plasma density and/or exposure time. On the other hand, our results are corroborated by Lee and Badzian [8], who have studied the morphology of etched substrates and homoepitaxial diamond films in relation to the miscut angles of the substrates.…”
Section: Discussioncontrasting
confidence: 99%
“…Kühnle and Weis have developed a chemomechanical polishing procedure that reduces the roughness of diamond {100} to less than 100 pm rms [3]. Others have used hydrogen-plasma etching to reduce the surface roughness, resulting in large atomically flat terraces [4,5]. On the other hand, etching of the diamond(100) with atomic hydrogen at an elevated substrate temperature has led to {111} faceting of the surface, which has been interpreted as anisotropic etching of the diamond by the thermal hydrogen atoms [14].…”
mentioning
confidence: 99%
“…The roughness of DLC films has been shown to depend on the various deposition methods 163,164 and deposition parameters such as ion energy, [165][166][167][168][169][170] gas mixture 163 and bias voltage. 169 Coating roughness is also dependent on substrate material [171][172][173] and the underlying substrate roughness.…”
Section: Dlc Reviewmentioning
confidence: 99%
“…Increasing the substrate temperature during deposition results in a higher proportion of sp 2 bonding, creating a more graphitic and therefore rougher surface. 165,174,175 Conversely, at temperatures between 700°C and 900°C, film smoothing occurred as an increase in surface diffusion rate accompanied the presence of atomic hydrogen. 176 The effect that film thickness has on film roughness has also been studied.…”
Section: Dlc Reviewmentioning
confidence: 99%
“…Indeed, studies using pure H 2 gas but under otherwise similar conditions to those used for diamond CVD show that the etch rate of (100) diamond is <10 nm h −1 . 9 However, this value is somewhat misleading as the etching occurs at defects, usually dislocations on the surface, which etch back laterally to form shallow rectangular etch pits. [10][11][12] Indeed, counting etch pits is often used as a method to determine the number density and distribution of dislocations at a diamond surface.…”
Section: Introductionmentioning
confidence: 99%