Mechanism of stress-induced leakage current in MOS capacitors

Metal nanolayer formed by tunnelling current through thin oxide in the electrolyte–oxide–silicon system

“…The EMOS device shows characteristics similar to those of the MOS device (see the red circle in Figure 4a). However, the current-voltage characteristics of the EOS system formed by the tunnelling electroplating process show a significant increase in the current, or a shift towards the negative voltage by about 1.5 V. This result is similar to the stress-induced leakage current [7,8] found in the conventional MOS structure. Therefore, we conclude that the penetrating H þ ions are responsible for the oxide degradation during the tunnelling electroplating process.…”

Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

“…Accordingly, the result indicates that the plasma post-treatment improve the properties of the PECVD SiO 2 /Si interface. Several recent studied indicate that most leakage currents results from inelastic tunneling of conduction bands electrons to defect centers in oxide near the Si/SiO 2 boundary [8] and a link between leakage currents and E 0 centers have been suggested [9]. Our result implies that those defects relating to the leakage current are reduced by the posttreatment.…”

Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon

“…Another point to clear out is the difference between the results for the ohmic type conductivity considered in this work, the inelastic trap-assisted tunneling [30] and the results obtained for the percolation of non-linear conductors [31]. In the first case the current is given with the Eq.…”