Mechanism of reverse current increase of vertical-type diamond Schottky diodes

Teraji, Tokuyuki; Fiori, Alexandre; Kiritani, Norihiko; Tanimoto, Satoshi; Gheeraert, Etienne; Koide, Yasuo

doi:10.1063/1.4994570

Cited by 25 publications

(13 citation statements)

References 31 publications

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“…Breakdown was observed at 3.3 MV cm −1 as there was a sudden increase in current. This value was close to the typical reported range of 2–3 MV cm −1 for diodes on high‐quality HPHT‐grown substrates . The forward/reverse characteristics of Diode‐B with a MAT buffer layer were essentially identical despite the presence of CBs.…”

Section: Sbds With a Mat Buffer Layersupporting

confidence: 87%

“…Such behavior is often observed for diamond SBDs. The metal–semiconductor interface (i.e., oxygen‐terminated surface) may have degraded because of the presence of defects . The Diode‐B devices showed uniform forward characteristics with n = 1.43 (standard deviation 0.05) and ϕ B = 1.33 eV (standard deviation 0.02 eV).…”

Section: Sbds With a Mat Buffer Layermentioning

confidence: 99%

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Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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A major obstacle limiting diamond electronics is dislocations, which deteriorate device properties. As threading dislocations (TDs) are normally inherited from the substrate to the epitaxial layer, control and annihilation of their propagation are important. Herein, metal-assisted termination (MAT), in which the propagation of dislocations is suppressed by in situ metal doping, is proposed. Heavy W doping is realized by a hot-filament (HF) chemical vapor deposition (CVD) using heated wires at a high temperature of >2400-K. A large reduction of TD density is confirmed by cathodoluminescence studies and etch-pit analysis. The impact of dislocation reduction is investigated electrically. After insertion of the MAT buffer layer, Schottky barrier diodes (SBDs) show improved rectifying action and highly uniform characteristics even when substrates with high dislocation densities (mosaic and heteroepitaxial wafers) are used. The 3D structure of dislocation propagation is successfully captured by two-photon-excited photoluminescence (2PPL) imaging of Band-A luminescence. The 2PPL Band-A luminescence (without band-edge excitation) shows high spatial resolution in the depth direction. An abrupt decrease in TD density is captured for heteroepitaxial substrates with an inserted MAT buffer layer. The MAT technique provides an effective approach to realize high-performance diamond electronics.

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Section: Sbds With a Mat Buffer Layersupporting

confidence: 87%

Section: Sbds With a Mat Buffer Layermentioning

confidence: 99%

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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“…When a Schottky barrier lowering patch

\emptyset_{normalB}^{low}

occurs in the Schottky region at a low reverse voltage under 40 V, the reverse current intensively flows to

\emptyset_{normalB}^{low}

, resulting in an increase in leakage current. [ 13 ] MIS SBD with insulator inserted, we can see that

\emptyset_{normalB}

increases by ≈0.2 eV compared to the conventional MS SBD. The improved barrier height reduces the Schottky contact inhomogeneity caused by the

\emptyset_{normalB}^{low}

patch following the insertion of

{HfO}_{2}

, and it is expected to influence the potential barrier at the Al/ p ‐diamond Schottky junction interface.…”

Section: Resultsmentioning

confidence: 91%

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Han¹,

Kwak²,

Choi³

et al. 2023

Physica Status Solidi (a)

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Herein, the growth of lateral‐structure p‐type diamond Schottky barrier diodes (SBDs) on a heteroepitaxial diamond substrate using a thin atomic‐layer‐deposited hafnium oxide () interfacial layer is demonstrated. The diamond SBD is grown using the microwave plasma chemical vapor deposition (MPCVD) with 1 kW microwave power at 2.45 GHz. Two kinds of samples are grown on heteroepitaxial diamond substrates under the same growth conditions for identical epi structures. And the 10 nm thickness of is used as an insulator for MIS SBD. The effects of the interlayer on the electrical properties of the SBDs are investigated using current–voltage (I–V curve) and capacitance–voltage (C–V curve) characteristics at room temperature. Compared with the metal–semiconductor (MS) SBD, the metal–insulator–semiconductor (MIS) SBD exhibited a lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD. The insertion of the interlayer reduces the inhomogeneous Schottky barrier height and enhances the barrier height because of the reduction in the interface state density.

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“…Schottky barrier height for Ru diamond Schottky diode could be estimated using ϕ surface , which is little higher than ϕ B0 . The reason for the discrepancy between KPFM and TE results is mainly due to the Schottky barrier height inhomogeneity. ,− …”

Section: Resultsmentioning

confidence: 99%

Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio

Liu

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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Self-powered solar-blind UV detectors were fabricated using high-quality Ru/diamond Schottky diodes. Photocurrents of 1 nA and 1.3 nA were obtained for detector Semi and Mesh under the condition of zero bias and 220 nm UV light irradiation, while the dark currents of these two detectors were 0.53 pA and 0.007 pA at 0 V, respectively. Photosensitive areas of detector Semi and Mesh were 1 mm 2 and 0.74 mm 2 , respectively. Rectification ratios as high as 1.5 × 10 7 and 5.7 × 10 8 at ±5 V for Semi and Mesh were obtained, showing good rectifying characteristics for the vertical Schottky diodes. Responsivities at 0 V of Semi and Mesh were 10.3 mA/W and 16.2 mA/W, respectively. High detectivities of 3.8 × 10 12 Jones and 5.2 × 10 13 Jones for detector Semi and Mesh indicate excellent self-powered detection performance. To make a comprehensive comparison of the performance of diamond solar-blind UV detectors, a log(I ph ) versus log(I dark ) graph was proposed, and the detector in this work showed an ultrahigh SNR of 2 × 10 5 . A high linear dynamic range of 105.9 dB was achieved for the self-powered detector Mesh.

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Mechanism of reverse current increase of vertical-type diamond Schottky diodes

Abstract: International audienc

Cited by 25 publications

References 31 publications

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Self-Powered Solar-Blind UV Detectors Based on O-Terminated Vertical Diamond Schottky Diode with Low Dark Current, High Detectivity, and High Signal-to-Noise Ratio

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