Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

Abstract

Evidence is given for the mechanism of hole-trap-related random telegraph noise (RTN) in reverse-biased junction leakage current occurring in the off-state of sub-micron scaled metal-oxide-semiconductor field-effect transistor (MOSFET). It was found that such RTN in junction leakage current, namely, variable junction leakage (VJL), is induced by applying hole-accumulation bias to the gate of the MOSFET. This result indicates that a hole captured in the gate oxide near the silicon surface influences the channel surface potential and causes fluctuation in generation-recombination (g-r) current generated at interface states. The fluctuation in g-r current is observed as VJL. It was also found that occurrence rate of VJL increases under hot-carrier stress. On the basis of these results, a model for VJL that can more concretely explain the mechanism of VJL quantitatively was developed.

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

“…Regarding the number of RTS transitions per VRT measurement (which is inversely proportional to the overall time constant), their activation energies are lower than the usually reported value in unirradiated DRAM (0.7 to 1.5 eV [2], [4], [26], [27]). Compared to the radiation induced DC-RTS literature, those time constant activation energies are also lower than the range reported in [15] and [28] (i.e.…”

“…VRT and VJL in DRAM are generally attributed to Gate-Induced-Drain-Leakage (GIDL) [34] with TAT as the main underlying mechanism [3], [27]. The defect at the origin of VRT is thought to be located at the Si/SiO 2 interface and silicon bulk defects are not mentioned as a possible source of VRT.…”

“…There are three main causes considered to explain the metastability of the G-R current at the origin of VRT and VJL [3], [26], [27] (see Fig. 16):…”

Nano-Intrinsic True Random Number Generation: A Device to Data Study

“…Random telegraph noise (RTN) has recently attracted a growing attention as probabilistic and relatively strong source of noise [15]. RTN has been studied in various types of devices including FETs [16][17][18][19], carbon nanotube transistors (CNTs) [20] and broad class of resistive switching memories [21][22][23][24][25][26]. Among these technologies, resistive memory devices have been observed to have one of the strongest RTN signals, hence, circuits presented RTN-based TRNGs using nanometer scale resistive memory devices have been shown without the need for amplification [27].…”

Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application

“…One of the random variations is Random Telegraph Noise (RTN) originated from the capture and emission processes of carriers into the traps in an oxide layer of the device [1]. As of now, this would significantly degrade the retention time in DRAM device.…”