and high density. [4][5][6][7] Moreover, memristors with analog switching behaviors can faithfully resemble biological computational elements in both structure and switching dynamics. With the intrinsic biomimetic features, memristors could act as the basic computational element in artificial neural networks and have been demonstrated with the capability of solving cognitive computing tasks with spatiotemporal complexity without complex peripheral circuits. [7] Among various material systems, 2D materials recently demonstrated memristive switching behaviors that possess biologically comparable energy consumption compared with the traditional memristors based on oxide materials. [8][9][10][11] Thanks to their atomically thin layers and planar configurations, 2D material based memristors have provided an intriguing window into the motions of ions and opportunities to achieve outstanding electrical performances. [12][13][14] It has been reported that vertical synapses built in 2D MoS 2 push the switching threshold voltages to an extremely low value of 0.1 V. [14] More recently, multiterminal memtransistor consisting of hybrid memristor and transistor were fabricated using 2D materials to realize gate-tunable heterosynaptic functionality, which could not be achieved with transitional materials. [4,15,16] In addition, the rapid development of chemical vapor deposition (CVD) technology enables wafer scale production of 2D material, paving the way for large scale integration of 2D devices. Therefore, dimensionality reduction from 3D to 2D provides an innovative way for further advancing memristor devices in both scalability and electrical performance.Despite enormous efforts have been devoted in investigating 2D material based memristors, progresses are only made on emulating various synaptic functions. Neuromorphic networks comprise layers of artificial neurons that receive, process and transmit signals, and synapses that connect the neurons and evolve to alter the connection patterns during learning. [17,18] Although artificial neurons based on traditional oxide and phase change materials have been implemented, 2D materials have their distinct advantages. [19,20] For instance, the physical properties of 2D materials can easily be modulated by multi factors, such as doping and interface engineering, 2D material based memristors have exhibited superior performance as artificial synapses for neuromorphic computing. However, 2D artificial neurons as have note been exploited as an indispensable computational element owing to the rich dynamics of neurons, which impede the construction of a 2D neuromorphic network. A methodology is developed by introducing ionic migration dynamics and electrochemical reaction into monolayer MoS 2 single crystal and a 2D artificial neuron is realized. The sophisticated electrophysiology process of leaky integrate-and-fire (LIF) is emulated by the injection and extraction of Ag + ions under an e-field in a monolayer MoS 2 device with fine-tuned channel length. Moreover, the fire frequency and ...