Mechanism of nonvolatile resistive switching in graphene oxide thin films

Zhuge, Fei; Hu, Bambi; He, Congli; Zhou, Xufeng; Liu, Zhaoping; Li, Run-Wei

doi:10.1016/j.carbon.2011.04.071

Cited by 143 publications

(131 citation statements)

References 43 publications

Supporting

Mentioning

125

Contrasting

Order By: Relevance

“…Among these, graphene oxide (GO), a graphene sheet decorated with oxygen groups (epoxide, hydroxyl, and carboxyl) on both sides, is one of the most promising candidates owing to its easy methods such as drop casting, spin coating, Langmuir-Blodgett (LB) deposition, and vacuum fi ltration required for the fabrication of uniform thin fi lms. [ 17 ] Besides, the switching properties of GO thin fi lms can be tuned by changing their chemical functionalities through a reduction process [ 18 ] or by mixing with other materials such as polymers, [ 19,20 ] nanoparticles, [ 21 ] and MoS 2 .[ 22 ] Although various GO-based memory devices have been suggested by research groups, [23][24][25][26][27][28] the exact mechanism of bistable resistive switching behavior in GO thin fi lms is still not fully understood.Previously, our group reported the development of a fl exible nonvolatile memory device based on spin-casted GO thin fi lms. [ 29 ] We presented the resistive switching mechanism as the formation and rupture of conducting nanofi laments formed at the amorphous top interface layer (TIL) between a GO thin fi lm and an Al top electrode.…”

mentioning

confidence: 99%

Direct Observation of Conducting Nanofilaments in Graphene‐Oxide‐Resistive Switching Memory

Kim

Choi

et al. 2015

Adv Funct Materials

View full text Add to dashboard Cite

6710 wileyonlinelibrary.com simple structure, high density, low power consumption, and fast switching speed. [ 1 ] To date, versatile resistive switching phenomena have been reported in various insulating or semiconducting materials, including binary transition metal oxides (NiO, TiO 2 , Ta 2 O 5 , ZnO, and HfO 2 ), [2][3][4][5][6][7] perovskite oxides, [ 8 ] solid electrolytes, [ 9 ] organic materials, [ 10 ] and amorphous Si. [ 11 ] Recently, carbon-based materials such as carbon nanotubes, [ 12,13 ] graphene-like conductive carbon, [ 14 ] and amorphous carbon [ 15,16 ] have also been considered as a potential element for resistance-change materials. Among these, graphene oxide (GO), a graphene sheet decorated with oxygen groups (epoxide, hydroxyl, and carboxyl) on both sides, is one of the most promising candidates owing to its easy methods such as drop casting, spin coating, Langmuir-Blodgett (LB) deposition, and vacuum fi ltration required for the fabrication of uniform thin fi lms. [ 17 ] Besides, the switching properties of GO thin fi lms can be tuned by changing their chemical functionalities through a reduction process [ 18 ] or by mixing with other materials such as polymers, [ 19,20 ] nanoparticles, [ 21 ] and MoS 2 .[ 22 ] Although various GO-based memory devices have been suggested by research groups, [23][24][25][26][27][28] the exact mechanism of bistable resistive switching behavior in GO thin fi lms is still not fully understood.Previously, our group reported the development of a fl exible nonvolatile memory device based on spin-casted GO thin fi lms. [ 29 ] We presented the resistive switching mechanism as the formation and rupture of conducting nanofi laments formed at the amorphous top interface layer (TIL) between a GO thin fi lm and an Al top electrode. To verify a microscopic model of this mechanism, it is crucial to directly observe the existence of conducting fi laments.Herein, we report on the direct visualization of nanoscale metallic fi laments formed at the amorphous TIL during the set process. Using a spherical-aberration-corrected transmission electron microscope (TEM) operated at 80 kV, we obtained crosssectional TEM images of GO thin fi lms sandwiched between two Al electrodes. A quantitative calculation of the structural changes in the GO thin fi lms after top electrode deposition was achieved using the radial distribution function (RDF) of fast Fourier transform (FFT) patterns acquired from the atomicresolution TEM images. In addition, we used atomic-resolution TEM and energy-fi ltered TEM (EFTEM) elemental mapping to identify the origin of the nanoscale metallic fi laments induced Direct Observation of Conducting Nanofi laments in Graphene-Oxide-Resistive Switching MemorySung Kyu Kim , Jong Yoon Kim , Sung-Yool Choi , * Jeong Yong Lee , * and Hu Young Jeong * Determining the presence of conducting fi laments in resistive random access memory with nanoscale thin fi lms is vital to unraveling resistive switching mechanisms. Bistable resistive switching within graphene-oxide (G...

show abstract

mentioning

confidence: 99%

Direct Observation of Conducting Nanofilaments in Graphene‐Oxide‐Resistive Switching Memory

Kim

Choi

et al. 2015

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…C-AFM has been readily used to analyze the electrical properties of gate oxides since the 1990s and provided much key information. It have been recently reported that direct observation of filament paths through memory environment such as TiO 2 [9], NiO [5], Cu x O [10], graphene oxide films [11]… can be widely provided by C-AFM.…”

Section: Introductionmentioning

confidence: 99%

Surface Mapping of Resistive Switching CrO<sub>x</sub> Thin Films

Pham¹,

Ta²,

Nguyen³

et al. 2016

AMPC

View full text Add to dashboard Cite

In this work, we investigated resistive switching behavior of CrOx thin films grown by using sputtering technique. Conventional I-V measurements obtained from Ag/CrOx/Pt/Ti/SiO2/Si structures depict the bipolar switching behavior, which is controlled by formation/dissolution processes of Ag conducting filaments through electrochemical redox reaction under external electric field driven. Conductive atomic force microscopy (C-AFM) technique provides the valuable mapping images of existing Ag filaments at low resistance state as well as the characteristics of filament distributions and diameters. This study also reveals that where the higher amplitude of topography is, the easier possibility of forming conducting filament paths is on CrOx surface films.

show abstract

“…The transition from the OFF state to the ON state is equivalent to a set/write process in a digital storage device, with a high ON/OFF current ratio of approximately 10 3 :1 which is comparable with the value of GO-based memory diode using metal electrodes. [31,32] Impressively, the …”

mentioning

confidence: 98%