Abstract:The kinetics of growth of the open circuit insulating oxide films on Hf, T i . Nb, Zr and Al were studies in many salt solutions using potential and capacitance measurements. The effect of salt type and concentration, oxygen concentration, temperature and surface pretreatment on the growth kinetics were also investigated. In all cases, the potential and the reciprocal capacitance were found to increase linearly with logarithm of time. It is assumed that the oxide film grows via the solid state mechanism under … Show more
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