Mechanism of growth and structure of titanium oxide ultrathin films deposited on Cu(001)

Thermally Annealed Sub‐Monolayers of AlF3 on Cu(100): An STM and XPS Study

“…This result resembles the case of other insulator islands decorated by metallic atoms. In particular, similar rectangular islands with bright borders have been reported by Finetti et al [17] who suggested that the bright borders observed in titanium oxide islands are originated by copper atoms expelled from the Cu(100) surface, which migrate to the Finally, a further annealing treatment at 700 K results in the total desorption of all the islands from the surface (not shown here).…”

Influence of Cu–Ti thin film surface properties on antimicrobial activity and viability of living cells

“…For our thin films a difference between the binding energies of Ti2p 3/2 and Ti2p 1/2 was 5.65 eV and the intensity ratio was almost 2:1 which indicated the formation of titanium at the 4+ oxidation state. However, the binding energy value for Ti2p 3/2 was 458.0 eV which was lower than the value reported for bulk TiO 2 (458.6 eV) [50], but still within the range of values reported for Ti(IV) in ultrathin films or at the very early stages of the oxide film formation [47,51,52]. Therefore it can be assumed, that the thin film was composed of metallic titanium, while on the surface oxidized Ti(IV) species were present.…”

“…The spectroscopic parameter related to the stoichiometry of the Ti(IV) represents a difference between the binding energies of Ti2p 3/2 and Ti2p 1/2 and should be ca. 5.6 eV [47][48][49]. Also the intensity ratio of Ti2p 3/2 and Ti2p 1/2 for Ti(IV) species should be 2:1 [50].…”

Reducible Oxides as Ultrathin Epitaxial Films

“…Experiments on titanium oxide ultrathin films grown on Cu(100) were carried out by different groups [61][62][63]. Maeda et al [61] deposited metallic Ti on the Cu surface previously exposed to O 2 (P= 1 × 10 -6 mbar at T=330 K), and oxidized the resulting film by post-growth O 2 dosage (P= 1 × 10 -7 mbar at T=623 K).…”