Mechanism of grain growth and excellent polarization, dielectric relaxtion of La3+, Nd3+ modified PZT nano-films prepared by sol–gel technique

Rare-earth-containing perovskite nanomaterials: design, synthesis, properties and applications

“…121,[133][134][135] Presently, the major challenge of RE-containing PNMs syntheses is to achieve flexible control in replacing the position of cations (B or A) in the perovskites structure with RE ions. 34,37,118,136 Over the past years, various synthesis methods have been reported on preparing RE-containing PNMs (Fig. 3).…”

“…1,26,27 Compared with bulk counterpart, nanosized perovskites exhibit a series of advantages: for the fabrication of thin films and flexible devices, PNMs display a high processability; 28,29 for catalysis, PNMs feature rich and modulatable facets and active sites; 30,31 besides, benefiting from the small-size effect and quantum effect, PNMs are endowed with outstanding photo-electro-magnetic properties. [32][33][34][35][36][37][38] All these new characteristics help to enrich the performances of perovskites and broaden their applications.…”

Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr3+ Doped Pb(Mg1/3Nb2/3)O3-PbTiO3 Ferroelectric Nano-Films Grown on Si Substrates

“…As shown in Figure 1a,c, α 001 values are 86.6% and 73.6% in Pr-PMN-PT thin films annealed at 650 °C for 2 and 3 min respectively, presenting the highly (001)-oriented textured structure. The preferred orientation was related to many factors, such as substrate materials [33], growth method, doping elements [31], annealing temperatures [34], and so forth. For Pr-PMN-PT thin films, the nucleation was in random direction at the start of thin film growth on the surface of Pt.…”

“…Recently, an ultrahigh piezoelectric coefficient ( d 33 = 1500 pC/N) was obtained in Sm-doped PMN-PT polycrystalline [30] based on polar nano-region (PNR) design in relaxor based ferroelectric materials. For Pb(Zr,Ti)O 3 (PZT) thin films, the dielectric and piezoelectric properties were improved by La doping [31]. Until now, little research has focused on the pyroelectric or piezoelectric properties of rare earth element-doped relaxor-PT (PMN-PT or PIN-PMN-PT) thin films.…”

Influence of YTS addition on structural and electrical properties of PZT-based ceramics

“…In the next step, the piezoelectric ceramics are polarized in silicon oil under high voltage which makes them highly piezoelectric, thus the piezoelectric ceramics can realize successful transformation between mechanical and electrical energy. The dopants can be divided into three main categories: i) donor doping, such as La 3+ , Bi 3+ , Nd 3+ doped in A sites, Nb 5+ in B sites [20][21][22], ii) acceptor doping, such as Mn 2+ , Fe 3+ , Al 3+ , Dy 3+ , Er 3+ doped in B sites [23][24][25][26], iii) isovalent doping, such as Sr 2+ , Ca 2+ , Ba 2+ in A sites, Sr 4+ in B sites [27,28]. PZT doping with donor ions, such as Y 3+ at A-site and Ta 5+ , Sb 5+ at B-site, reduces the concentration of intrinsic oxygen vacancies created due to PbO evaporation and compensates the hole formed due to lead vacancies, which in turn increases bulk resistance of the sample.…”