Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.; Davydova, T. A.; Kalygina, V. M.

doi:10.1134/s1063782608030172

Cited by 6 publications

(8 citation statements)

References 4 publications

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“…It is shown in [15] that in accordance with the hypothesis put forward in [13,14], the change in | U c | can be described by the following expression:…”

Section: Hydrogen Sensors Based On Silicon Mos-structuressupporting

confidence: 52%

“…As n Н 2 increases from 10 3 to 10 4 ppm, ΔU f.b /Δ| U c | decreases from 5.7 to 2.5. By contrast, the SCR capacity relaxation time in the MOS-diode at n Н 2 = 10 3 ppm is one order of magnitude higher than that in the MOS-structure [15]. In addition, U f.b > 0 in the MOS-diode.…”

Section: Hydrogen Sensors Based On Tunnel Mos-diodesmentioning

confidence: 65%

“…It follows from the experimental data [15], that at n Н 2 = 10 3 ppm and Т = 297 K, τ а ≅ 7.4 s. This is the relaxation time of hydrogen atom adsorption on the SiO 2 surface. The diffusion time of hydrogen atoms through the palladium layer is about 10 -2 s and can be neglected.…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 94%

“…However, this dependence is weaker than that for the depletion regime. The time dependence | ΔU cH (t) | is written as [15] c.…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 99%

“…+ U c [5]. For the MOS-structure studied in [15], U d = -8.94 V and the average electric field strength in the dielectric is Е d = 2.4⋅10 5 V/cm. The electric field strength in the gap is Е gap = ε SiO 2 ⋅Е d = 9.45⋅10 5 V/cm.…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 99%

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Basic physics of semiconductor hydrogen sensors

Gaman

2008

Russ Phys J

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The most probable physical models of hydrogen sensors based on thin stannic oxide films, MOS-structures, and tunnel MOS-diodes are discussed. The emphasis is on the mechanisms of formation of sensor response to hydrogen. The analytical equations describing the dependence of the response on the hydrogen concentration n Н 2 are derived for all types of sensors. The relations describing the dependences of the SnO 2 -sensor conductivity and response on the absolute humidity of a gas mixture are given. It is shown that the relaxation time τ rel of the response of SnO 2 -and MOS-structure sensors is determined by the relaxation time τ а of hydrogen atom adsorption on the SnO 2 and SiO 2 surfaces, respectively. For the MOS-diodes, τ rel = τ а at n Н 2 <3⋅10 3 ppm and τ rel = τ d at n Н 2 ≥ 7.5⋅10 3 ppm, where τ d is the relaxation time of hydrogen atom diffusion through an SiO 2 layer.

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“…It is shown in [15] that in accordance with the hypothesis put forward in [13,14], the change in | U c | can be described by the following expression:…”

Section: Hydrogen Sensors Based On Silicon Mos-structuressupporting

confidence: 52%

Section: Hydrogen Sensors Based On Tunnel Mos-diodesmentioning

confidence: 65%

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 94%

“…However, this dependence is weaker than that for the depletion regime. The time dependence | ΔU cH (t) | is written as [15] c.…”

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 99%

Section: Hydrogen Sensors Based On Silicon Mos-structuresmentioning

confidence: 99%

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