Mechanism of formation of highly conductive layer on ZnO crystal surface

Маркевич, И. В.; Кушниренко, В. И.; Borkovska, L.; Bulakh, B. M.

doi:10.1016/j.ssc.2005.09.001

Cited by 18 publications

(13 citation statements)

References 12 publications

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“…This hysteresis is well-documented in the literature, with both surface adsorption 34,57 and mobile impuri- Our experimental data suggest that this hysteresis is the result of mobile Zn interstitials within the ZnO nanoplate. We believe this for several reasons: (1) the literature reports that Zn interstitials become mobile between 90-130 K, 59 and we observed the hysteresis effect only for temperatures above 100 K; (2) the activation energy that we measured in Section III corresponds well with what is expected for Zn interstitials; (3) for positive gate bias, the threshold moves to higher positive bias, which is consistent with positively-charged Zn interstitials in an n-type semiconductor; and (4) this effect is observed in a helium environment where we do not expect any oxygen to be available for adsorption, especially since we are able to repeatedly cycle the effect.…”

Section: Threshold Behaviorsupporting

confidence: 79%

Weak localization and mobility in ZnO nanostructures

et al. 2009

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We conduct a comprehensive investigation into the electronic and magneto-transport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid (VLS) method. We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration. We measure phase coherence lengths of 50-100 nm at 1.9 K, and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study. We then proceed to study the effect of weak localization on electron mobility using 4-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration. We report an electron mobility of ∼100 cm 2 V s at 275 K, comparable to what is observed in ZnO thin films. We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires, and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices. Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively-charged Zn interstitial impurities.

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Section: Threshold Behaviorsupporting

confidence: 79%

Weak localization and mobility in ZnO nanostructures

et al. 2009

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“…Photo-induced processes observed under Original Paper HTPI and the destruction of highly conductive layer (i.e. the decrease of donor density near the surface) in [7] were found to occur under the same conditions. In both cases the same conditions were required for the restoration of the initial state.…”

Section: Discussionmentioning

confidence: 65%

“…When oxygen was desorbed, the electric field disappeared, "excessive" donors returned to the crystal bulk, donor density in near-surface layer decreased, and highly conductive layer destroyed. After following oxygen adsorption this layer was restored [7]. Photo-induced processes observed under Original Paper HTPI and the destruction of highly conductive layer (i.e.…”

Section: Discussionmentioning

confidence: 96%

“…It was recently shown that highly conductive layer was formed due to accumulation of mobile shallow donors at the surface because of their drift in depletion band-bending electric field created by adsorbed oxygen [7]. When oxygen was desorbed, the electric field disappeared, "excessive" donors returned to the crystal bulk, donor density in near-surface layer decreased, and highly conductive layer destroyed.…”

Section: Discussionmentioning

confidence: 99%

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Photo‐induced changes of photoconductivity and exciton luminescence in ZnO crystals

Маркевич

Кушниренко

Bulakh

2007

Physica Status Solidi (b)

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“…Destruction and restoration processes were proved to be controlled by oxygen desorption and adsorption accordingly. Detailed description of these experiments will be published elsewhere [23].…”

Section: Experimental and Discussionmentioning

confidence: 99%

Mobile donors in undoped ZnO

Маркевич

Кушниренко

Borkovska

et al. 2006

Phys. Status Solidi (c)

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Direct evidence that dominant shallow donors in undoped ZnO are mobile defects has been obtained. It has been found that these donors influence not only electrical conductivity, but also optical absorption and luminescence. Migration of mobile donors in crystal lattice, which can be already observed at 300 K, results in instability of ZnO characteristics. Common analysis of obtained results and literature data has led to the conclusion that dominant donors in undoped ZnO are zinc interstitials.

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Mechanism of formation of highly conductive layer on ZnO crystal surface

Cited by 18 publications

References 12 publications

Weak localization and mobility in ZnO nanostructures

Weak localization and mobility in ZnO nanostructures

Photo‐induced changes of photoconductivity and exciton luminescence in ZnO crystals

Mobile donors in undoped ZnO

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