Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Belyaev, A. E.; Болтовец, Н. С.; Иванов, В. Н.; Klad’ko, V. P.; Конакова, Р. В.; Kudrik, Ya. Ya.; Kuchuk, Andrian; Миленин, В. В.; Sveshnikov, Yu. N.; Шеремет, В. Н.

doi:10.1134/s1063782608060092

Cited by 30 publications

(49 citation statements)

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“…[10][11][12][13][14] Very interesting studies among these were presented by Kar et al 10 and Cao et al, 11 where the results indicated the likelihood of a primary currenttransport mechanism being multistep tunneling and defectassisted tunneling instead of TE, respectively. Evstropov et al 12,13 and Balyaev et al 14 showed that the current flow in the III-V heterojunctions is generally governed by multistep tunneling with the involvement of dislocations even at room temperature. They demonstrated that an excess tunnel current can be attributed to dislocations.…”

Section: Introductionmentioning

confidence: 95%

“…However, the slope and nT values remain almost unchanged over the same temperature range with an average of 11.35 V −1 and 1025 K, respectively. The high value of n has been attributed to several effects such as interface states, tunneling currents in the high dislocations, [12][13][14] image force lowering of the Schottky barrier in the high electric field at a MS interface, and generation currents within the spacecharge region. 18 The TFE mechanism can be ruled out in this region, since nT is more or less constant in the measured temperature range.…”

Section: ͑7͒mentioning

confidence: 99%

“…Similar results have been reported in the literature. [11][12][13][14][26][27][28][29] The temperature dependences of I t and E 0 are shown in By using the model equation ͑11͒ and determined I t and E 0 from the measured I-V characteristic as well as knowing V K ͑0͒, which is the expression for the DD that can be given as [12][13][14] …”

Section: ͑7͒mentioning

confidence: 99%

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Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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The current-transport mechanisms in ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures were studied by using temperature dependent forward-bias current-voltage ͑I-V͒ characteristics in the temperature range of 80-410 K. In order to determine the current mechanisms for ͑Ni/ Au͒ -Al 0,22 Ga 0,78 N / AlN/ GaN heterostructures, we fitted the experimental I-V data to the analytical expressions given for the current-transport mechanisms in a wide range of applied biases and at different temperatures. The contributions of thermionic-emission, generation-recombination, tunneling, leakage currents that are caused by inhomogeneities, and defects at the metal-semiconductor interface current mechanisms were all taken into account. The best fitting results were obtained for the tunneling current mechanism. On the other hand, we did not observe sufficient agreement between the experimental data and the other current mechanisms. The temperature dependencies of the tunneling saturation current ͑I t ͒ and tunneling parameters ͑E 0 ͒ were obtained from fitting results. We observed a weak temperature dependence of the saturation current and the absence of the temperature dependence of the tunneling parameters in this temperature range. The results indicate that in the temperature range of 80-410 K, the mechanism of charge transport in the ͑Ni/ Au͒ −Al 0.22 Ga 0.78 N / AlN/ GaN heterostructure is performed by tunneling among those dislocations intersecting the space charge region. The dislocation density ͑D͒ that was calculated from the I-V characteristics, according to a model of tunneling along the dislocation line, gives the value of 0.24ϫ 10 7 cm −2 . This value is close in magnitude to the dislocation density that was obtained from the x-ray diffraction measurements.

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Section: Introductionmentioning

confidence: 95%

Section: ͑7͒mentioning

confidence: 99%

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Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Arslan

Altındal

Özçelik

et al. 2009

Journal of Applied Physics

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“…It was noted in [3,4] that such behavior may be caused by conduction via metal shunts (formed by segregation of metal atoms on dislocations) shorting the space-charge region. X-ray diffractometry showed that the dislocation density in the GaN film under investigation was ≥ 10 8 cm -2 [11], which supported a possibility of such mechanism of current flow.…”

Section: Resultsmentioning

confidence: 67%

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

Шеремет¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The temperature dependence of contact resistivity ρ с of Ti-Al-TiB 2 -Au ohmic contacts to n-GaN and effect of microwave treatment on ρ с are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by diffusion supply of electrons. It is shown that microwave treatment increases the dislocation density in the near-contact region of contact structure and reduces the relative spread of resistivity values of contacts formed on the wafer.

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“…The high densities of threading dislocations in the epitaxial layers affect the performance reliability of the device. If many defects exist near the surface region, the electrons can easily go through the barrier by defect-assisted tunneling, thereby greatly enhancing the tunneling probability [7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

et al. 2013

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Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/ AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.

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Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

Cited by 30 publications

References 6 publications

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Dislocation-governed current-transport mechanism in (Ni/Au)–AlGaN/AlN/GaN heterostructures

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

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