Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing

Wu, I‐Wei; Jackson, Warren B.; Huang, Tiao‐Yuan; Lewis, A.G.; Chiang, A.

doi:10.1109/55.61785

Cited by 121 publications

(42 citation statements)

References 11 publications

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“…These preferential passivation phenomena for the acceptor type midgap states have also been found in the hydrogenation experiments for the n-channel and p-channel TFTs. 11,12 Next, the dependence of the resistivity of the undoped films on the hydrogenation time is shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Effects of hydrogen passivation on the electrical conduction in undoped polycrystalline silicon films

Saito

Aomori

Kuwano

1997

Journal of Applied Physics

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The influence of the hydrogenation treatment on the conduction mechanism in the undoped polycrystalline silicon films near room temperature was investigated. The two current components are predicted from the temperature dependence of the conductivity in the films. We consider the hopping current in addition to the conventional thermionic (or drift) current. We have also found the hydrogenation induced increase phenomena of resistivity in the undoped polycrystalline silicon films and its activation energy, and qualitatively explain those by the decrease of the hopping current, which would relate to the band tail states, and that of the thermionic current, which would relate to the midgap states. From the analysis of the current components, it takes longer time for the passivation of the band tail states than that of the midgap states.

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Section: Resultsmentioning

confidence: 99%

Effects of hydrogen passivation on the electrical conduction in undoped polycrystalline silicon films

Saito

Aomori

Kuwano

1997

Journal of Applied Physics

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“…13 To investigate the origin of the sources of charge responsible for the TFT degradation, an empirical relationship between the device parameters has been examined. The relative changes in ⌬V on and I L /I LO versus the relative changes of S/S o and G m /G mo , respectively, are plotted in a log-linear scale in Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors

Hastas

Dimitriadis

Kamarinos

2002

Journal of Applied Physics

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The effect of the SiO2/polycrystalline silicon (polysilicon) interface roughness on the stability of n-channel large grain polysilicon thin-film transistors (TFTs) is investigated. The positive gate voltage of 20 V is used in the bias stress experiments, with the source and drain grounded. It is shown that the current through the gate oxide and the stability of the TFT are directly related to the importance of the interface roughness. The evolution of the TFT parameters with stress duration indicates that the turn-on voltage Von and the subthreshold swing voltage S are degraded due to the generation of dangling bond midgap states, while the leakage current IL and the maximum transconductance Gm are degraded due to the generation of strain-bond tail states. Moreover, the parameters Von and IL are found to degrade faster than the parameters S and Gm, respectively, due to electron trapping in the gate oxide.

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“…There have been a number of previous investigations into the stability of poly-Si TFTs. Several degradation mechanisms have been characterized [1][2][3][4][5][6]. However, the effect of a single perpendicular grain boundary in the center of the channel on the reliability of poly-Si TFTs has not, to our knowledge, been investigated.…”

Section: Introductionmentioning

confidence: 99%

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

2007

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Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing

Cited by 121 publications

References 11 publications

Effects of hydrogen passivation on the electrical conduction in undoped polycrystalline silicon films

Effects of hydrogen passivation on the electrical conduction in undoped polycrystalline silicon films

Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

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