Mechanism of CO and O3 sensing on WO3 surfaces: First principle study

DFT study on interaction of NO2 with the vacancy-defected WO3 nanowires for gas-sensing

“…The general sensing mechanism of semiconductor oxide gas sensors belongs to the surface-controlled type, that is, surface adsorption of gas molecules induces the electrical conductivity change of the oxides [9]. Therefore, the gas-surface interaction and further the gas response of oxide-based sensors strongly depend on the surface properties of the sensing materials.…”

Mechanism of O3 sensing on Cu2O(111) surface: First principle calculations

“…In particular we have studied WO 3 , n-type semiconductor to detect O 3 , NO x and CO [8,9]. In the continuity of these works we first have been interested in CuO p-type semiconductor as layer for O 3 detection [10].…”

A DFT study on WO3 nanowires with different orientations for NO2 sensing application

“…As to the study about tungsten oxide-based gas sensors, however, relatively rich experimental works at present show the lack of the correlative theoretical studies, and only very limited works can be found in the literatures. Oison et al [19] illustrated the microscopic mechanism of O 3 and CO sensing on WO 3 surface by highlighting the role of the oxidation of CO and the reduction of O 3 on the value of the resistivity of WO 3 gas sensor. Our group has previously used DFT calculations to investigate adsorption of NO 2 on bulk WO 3 (0 0 2) surface [20].…”