Mechanism of chemical doping in electronic-type-separated single wall carbon nanotubes towards high electrical conductivity

Puchades, Ivan; Lawlor, Colleen C.; Schauerman, Christopher M.; Bucossi, Andrew R.; Rossi, Jamie E.; Cox, Nathanael D.; Landi, Brian J.

doi:10.1039/c5tc02053k

Cited by 66 publications

(65 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Likewise, the Raman Gʹ peak position of the SWCNTs is sensitive to the presence of residual SDS, which manifests as an upshift in frequency compared to the P-SWCNT control (2632 cm -1 compared to 2625 cm -1 , respectively, as shown in Figure S7a). The same doping effects described in the suppression of the BWF feature also contribute to the modulation in the Gʹ peak position, which has been previously demonstrated for both chemical [30] and electrochemical [37] doping of SWCNT structures. After reagent treatment, the Gʹ peak position is down-shifted toward that of the P-SWCNT control, with the greatest improvement observed for the ACT-SWCNT sample (2623 cm -1 ).…”

Section: Resultssupporting

confidence: 72%

“…Suppression of the BWF lineshape in the presence of residual surfactant indicates that the SDS in the current study acts as a SWCNT dopant, which causes perturbations of the Fermi level due to charge exchange [30,35,36]. Recovery in the BWF lineshape after surfactant removal demonstrates that the doping is reversible and indicates that Raman spectroscopy can be used to assess purity in the reagent treated samples.…”

Section: Resultsmentioning

confidence: 69%

“…Additionally, the influence of doping can convolute the interpretation of purification efficacy in the spectroscopic and electrical analysis. [29,30] This qualitative reagent survey was conducted using a 1:1 (v:v) ratio to disrupt the SDS:SWCNT interaction for the selected reagents. The post-mixing sonication time and temperature were found to have little consequence on the efficacy of the reagent treatment.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Rossi

Soule

Cleveland

et al. 2017

Journal of Colloid and Interface Science

Self Cite

View full text Add to dashboard Cite

A reagent-based treatment method was developed for the removal of sodium dodecyl sulfate (SDS) from aqueous dispersions of single-wall carbon nanotubes (SWCNTs). Based on a survey of various reagents, organic solvents emerged as the most effective at interrupting the SDS:SWCNT interaction without producing deleterious side reactions or causing precipitation of the surfactant. Specifically, treatment with acetone or acetonitrile allows for the facile isolation of SWCNTs with near complete removal of SDS through vacuum filtration, resulting in a 100x reduction in processing time. These findings were validated via quantitative analysis using thermogravimetric analysis, Raman spectroscopy, 4-point probe electrical measurement, and X-ray photoelectron spectroscopy. Subsequent thermal oxidation further enhances the purity of the reagent treated samples and yields bulk SWCNT samples with >95% carbonaceous purity. The proposed reagent treatment method thus demonstrates potential for large volume SWCNT processing.

show abstract

Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Rossi

Soule

Cleveland

et al. 2017

Journal of Colloid and Interface Science

Self Cite

View full text Add to dashboard Cite

show abstract

“…Over the course of the last two decades, considerable experimental research has investigated the conduction performance of single wall carbon nanotubes [7], multiwall carbon nanotubes ( [8], doped CNT [3,[9][10][11][12], CNT composites [13,14], CNT junctions [15], and CNT networks [16]. Complimentary computational research on these topics has also been performed, although the ab initio computational literature has modeled rather simple systems [11], due in large part to high computational cost.…”

Section: Introductionmentioning

confidence: 99%

Ab Initio Study of Iodine-Doped Carbon Nanotube Conductors

Fahrenthold

2018

Journal of Engineering Materials and Technology

View full text Add to dashboard Cite

The widespread use of copper in power and data cabling for aircraft, ships, and ground vehicles imposes significant mass penalties and limits cable ampacity. Experimental research has suggested that iodine-doped carbon nanotubes (CNTs) can serve as energy efficient replacements for copper in mass sensitive cabling applications. The high computational costs of ab initio modeling have limited complimentary modeling research on the development of high specific conductance materials. In recent research, the authors have applied two modeling assumptions, single zeta basis sets and approximate geometric models of the CNT junction structures, to allow an order of magnitude increase in the atom count used to model iodine-doped CNT conductors. This permits the ab initio study of dopant concentration and dopant distribution effects, and the development of a fully quantum based nanowire model which may be compared directly with the results of macroscale experiments. The accuracy of the modeling assumptions is supported by comparisons of ballistic conductance calculations with known quantum solutions and by comparison of the nanowire performance predictions with published experimental data. The validated formulation offers important insights on dopant distribution effects and conduction mechanisms not amenable to direct experimental measurement.

show abstract

“…[54] For instance, AuCl 3 aqueous solution was applied to the device surface by spin-coating in our previous study. [24] Here, a new doping process in an acetone bath is developed (refer to Experimental details), which can be potentially applied to transfer any floating GOCNT or thick CNT films onto any substrates without damaging the surface.…”

Section: Aucl 3 Bath Dopingmentioning

confidence: 99%

Application of Hole-Transporting Materials as the Interlayer in Graphene Oxide/Single-Wall Carbon Nanotube Silicon Heterojunction Solar Cells

Grace

Pham

et al. 2017

Aust. J. Chem.

View full text Add to dashboard Cite

Solid-state hole-transporting materials, including the traditional poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), and recently developed 4,4 0 -(naphthalene-2,6-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (NAP) and (E)-4 0 ,4, have been applied as a hole-transporting interlayer (HTL) for graphene oxide/single-walled carbon nanotube-silicon (GOCNT/Si) heterojunction solar cells, forming a GOCNT/HTL/Si architecture. The influence of the thickness of the HTL has been studied. A new AuCl 3 doping process based on bath immersion has been developed and proved to improve the efficiency. With the AuCl 3 -doped GOCNT electrodes, the efficiency of GOCNT/PEDOT:PSS/Si, GOCNT/NAP/Si, and GOCNT/BPV/Si devices was improved to 12.05 AE 0.21, 10.57 AE 0.37, and 10.68 AE 0.27 % respectively. This study reveals that the addition of an HTL is able to dramatically minimise recombination at the heterojunction interface.

show abstract

Mechanism of chemical doping in electronic-type-separated single wall carbon nanotubes towards high electrical conductivity

Abstract: Electronic-type-separated SWCNTs thin-films were used to demonstrate that the strength of the redox potential of dopants influences their electrical conductivity enhancement.

Cited by 66 publications

References 45 publications

Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Removal of sodium dodecyl sulfate surfactant from aqueous dispersions of single-wall carbon nanotubes

Ab Initio Study of Iodine-Doped Carbon Nanotube Conductors

Application of Hole-Transporting Materials as the Interlayer in Graphene Oxide/Single-Wall Carbon Nanotube Silicon Heterojunction Solar Cells

Contact Info

Product

Resources

About