Mechanism of Anodic Germanium Oxide Film Formation

Story, Joseph B.

doi:10.1149/1.2423371

Cited by 3 publications

(2 citation statements)

References 3 publications

(5 reference statements)

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“…The primary reasons for using nonaqueous anodizing solutions are to reduce the fraction of the anodic oxidation product dissolving during film growth (3) and to increase the current efficiency of the film formation process. In some instances, where the oxidation product is readily soluble in an aqueous environment, the use of a nonaqueous media may be the only way to grow an anodic film on that metal in solution (1,4).…”

mentioning

confidence: 99%

Anodization of Vanadium in Acetic Acid Solutions

Keil¹,

Salomon²

1968

J. Electrochem. Soc.

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Uniform anodic vanadium tetroxide films of controlled thickness have been grown on vanadium in acetic acid-sodium tetraborate solutions containing small quantities of water. The film composition was established using Faraday's law and EPR and ATR spectroscopy. The anode reaction was found to be 100% efficient in the production of vanadium (IV)oxide. The lack of oxygen evolution was attributed to reduced water activity as a result of its interactions with the acetic acid. Information concerning the nature of the film was obtained.

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confidence: 99%

Anodization of Vanadium in Acetic Acid Solutions

Keil¹,

Salomon²

1968

J. Electrochem. Soc.

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“…The difference between the interferometric thickness and the one calculated from the capacitance could be due to some hydration of the oxide during formation. Story (18) has proposed that water diffuses into and through the GeOz film during the anodization of Ge.…”

Section: Methodsmentioning

confidence: 99%

A-C Properties of Anodic Oxide Films on Silicon

Dreiner¹

1966

J. Electrochem. Soc.

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Low resistivity (∼0.02 ohm cm), (111)‐oriented, p‐type silicon slices were anodized in a solution of 0.04N KNO3 in ethylene glycol containing 2% water, and the dielectric behavior of the system normalSi/anodic SiO2/normalelectrolyte has been studied. It was found that the reciprocal capacitance decreased proportionally to the square root of time during which the sample was immersed in a measurement electrolyte. Denning a “diffusion constant,” 2D=false(εεo·A)2∂false(1/C)2/∂t , it was found that D was not affected by the pH of the measurement electrolyte but increased (i) with the water content of the electrolyte, (ii) with temperature, and (iii) with anodic bias. An activation energy of 0.66 ev has been determined between 0° and 75 °C. It is suggested that water, after entering the anodic oxide, dissociates into hydroxyl groups which migrate into the oxide and cause the effective dielectric thickness to decrease. Partial dehydration was possible by annealing or by evacuation. The frequency dependence of the capacitance, when measured in an electrolyte of low water content, (i) increased with film thickness for oxide layers formed at the same current density, and (ii) decreased with increasing formation current density for constant film thickness.

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Electrical Characterization of Some Native Insulators on Germanium

et al. 1986

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Preliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

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Mechanism of Anodic Germanium Oxide Film Formation

Cited by 3 publications

References 3 publications

Anodization of Vanadium in Acetic Acid Solutions

Anodization of Vanadium in Acetic Acid Solutions

A-C Properties of Anodic Oxide Films on Silicon

Electrical Characterization of Some Native Insulators on Germanium

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