2012
DOI: 10.1039/c2jm15682b
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Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells

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Cited by 26 publications
(10 citation statements)
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“…Transparent conducting oxides (TCOs) have been widely used for various kinds of optical and electrical devices due to their excellent combined electrical conductivity and optical transparency in the visible range of the electromagnetic spectrum [1]. Currently, the different types of TCO structures such as TCO/Metal/TCO and TCO/TCO have been proposed to enhance the TCO properties towards solar photovoltaic (PV) applications [2,3]. The dominant TCO is indium tin oxide (ITO) as it shows moderate electrical resistivity and good transmittance in the visible range [4].…”
Section: Introductionmentioning
confidence: 99%
“…Transparent conducting oxides (TCOs) have been widely used for various kinds of optical and electrical devices due to their excellent combined electrical conductivity and optical transparency in the visible range of the electromagnetic spectrum [1]. Currently, the different types of TCO structures such as TCO/Metal/TCO and TCO/TCO have been proposed to enhance the TCO properties towards solar photovoltaic (PV) applications [2,3]. The dominant TCO is indium tin oxide (ITO) as it shows moderate electrical resistivity and good transmittance in the visible range [4].…”
Section: Introductionmentioning
confidence: 99%
“…Spray coating does not seem to be the right method for the fabrication of the Si layers, however, it has been employed to synthesize their electrodes, such as ZnO:In layers [59], transparent conductive F-doped SnO 2 [60], In-doped ZnO [61], Al-doped ZnO and F-doped SnO 2 [62] thin films.…”
Section: Other Thin Film Solar Cellsmentioning
confidence: 99%
“…Such the sandwiched structure provides the immunity to metal diffusion and a low-defect AZO/a-Si:H interface, where the AZO acted as a protective layer eliminating H þ ion bombardment on the electrode substrate. 14 The low plasma power density for the a-Si:H deposition can also minimize the ion bombardment on the substrate. 15 Moreover, the nano-scale smooth surface of the TCO electrode by smoothening the protrusion and sharp valley of FTO/Au-NPs is beneficial to the growth of the dense a-Si:H film of low-defect density.…”
mentioning
confidence: 99%