Mechanism for switchability in electron-doped ferroelectric interfaces

Chapman, Kelsey S.; Atkinson, W. A.

doi:10.1103/physrevb.105.035307

Cited by 4 publications

(14 citation statements)

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“…We observed similar behaviour in Ref. [44] for idealized head-to-head domain walls where, as with Fig. 3, electrons spilled over to the surfaces when en 2D > ∼ 2P 0 .…”

Section: A Short-circuit Conditionssupporting

confidence: 88%

“…We observed similar effects in Ref. [44], and these appear tied to overscreening by the electron gas when en 2D > ∼ P 0 . Second, it should be emphasized that the results presented in Fig.…”

Section: B Voltage Dependencesupporting

confidence: 86%

“…As we discussed at length in Ref. [44], it is the internal field that largely controls the behaviour of the itinerant electrons: bound and free charges bind together to form an approximately neutral compensated state at the positive end of the ferroelectric. The orientation of the polarization is then controlled by the external field through its action on the unscreened negative end of the ferroelectric.…”

Section: B Voltage Dependencementioning

confidence: 98%

“…K. Chapman and I recently explored these questions with a model system similar to the one shown in Fig. 1(a) [44]. The system comprises a ferroelectric substrate capped by a thin dielectric film (representing LaAlO 3 ) and sandwiched by capacitor plates on the top and bottom surfaces.…”

Section: Introductionmentioning

confidence: 99%

“…To address this, I report on a set of numerical calculations similar to those we published in Ref. [44], but with the potential, polarization, and electron density allowed to be functions of two spatial coordinates [x and z in Fig. 1(a)].…”

Section: Introductionmentioning

confidence: 99%

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Evolution of domain structure with electron doping in ferroelectric thin films

Atkinson

2022

Preprint

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To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale "Kittel" domains of opposite polarization that are separated by uncharged 180 • domain walls. Here, I report on self-consistent solutions of coupled Landau-Ginzburg-Devonshire and Schrödinger equations for an electron-doped ferroelectric thin film. The model is based on LaAlO3/SrTiO3 interfaces in which the SrTiO3 substrate is made ferroelectric by cation substitution or strain. I find that electron doping destabilizes the Kittel domains. As the two-dimensional electron density n2D increases, there is a smooth crossover to a zigzag domain wall configuration. The domain wall is positively charged, but is compensated by the electron gas, which attaches itself to the domain wall and screens depolarizing fields. The domain wall approaches a flat head-to-head configuration in the limit of perfect screening. The polarization profile may be manipulated by an external bias voltage and the electron gas may be switched between surfaces of the ferroelectric film.

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“…We observed similar behaviour in Ref. [44] for idealized head-to-head domain walls where, as with Fig. 3, electrons spilled over to the surfaces when en 2D > ∼ 2P 0 .…”

Section: A Short-circuit Conditionssupporting

confidence: 88%

Section: B Voltage Dependencesupporting

confidence: 86%

Section: B Voltage Dependencementioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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