Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Sugimura, Wataru; Takata, Kousuke; Tanaka, Masaki; Higashida, Kenji

doi:10.2320/matertrans.m2019046

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…First-principles Calculations According to Griffith's theory, 37) the fracture toughness K IC of a brittle material can be expressed by the following equation. 38,39) where E is the Young's modulus, γ s is the fracture surface energy, and ν is Poisson's ratio. From Eq.…”

Section: Evaluation Of Fracture Toughness Values Usingmentioning

confidence: 99%

Evaluation of Cleavage Fracture Behavior of C14 Fe<sub>2</sub>W Laves Phase by First-principles Calculations and Crystal Orientation Analysis

et al. 2022

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In this study, the cleavage fracture of the C14 Fe 2 W Laves phase was investigated by first-principles calculations and crystal orientation analysis using scanning electron microscopy. Trace analysis of the orientations of cleavage planes revealed that cleavage fracture occurred in five types of crystal planes: (0001), {1100}, {1120}, {1101}, and {1122}. Among these fractures, the fracture at (0001) is the most preferable. From, the first-principle calculations of the surface energy for fracture, Young's modulus, and Poisson's ratio, the minimum fracture toughness value of 1.62 MPa•m 1/2 was obtained at (0001). The tendency of the calculated fracture toughness to become larger with high indexed planes is almost the same as the frequency of the types of cleavage planes in the trace analysis. It was concluded that the fracture toughness of the C14 Fe 2 W Laves phase is controlled by the surface energy for fracture and Young's modulus.

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Section: Evaluation Of Fracture Toughness Values Usingmentioning

confidence: 99%

Evaluation of Cleavage Fracture Behavior of C14 Fe<sub>2</sub>W Laves Phase by First-principles Calculations and Crystal Orientation Analysis

et al. 2022

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“…As a result, it is possible to obtain improvements in the characteristics of silicon structures [13][14][15]. However, in the presence of a significant number of linear defects, such techniques can cause mechanical damage to the surface [16].…”

Section: Introductionmentioning

confidence: 99%

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si–SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si–H3 complexes increases that of O3–Si–H.

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Detection of Microcracks in Cz‐Si Wafer Manufacturing by Photoluminescence Imaging

Mustonen,

Lähteenmäki,

Savin

2024

Physica Status Solidi (a)

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Photoluminescence imaging (PLI) is a widely accepted, fast, and contactless method for detecting crystal defects in crystalline silicon solar cells and solar‐grade silicon wafers. However, it is less known by semiconductor wafer manufacturers despite the similarities between photovoltaic (PV) and semiconductor wafers. This study focuses on the detection of microcracks by PLI during high‐quality Czochralski silicon (Cz‐Si) wafer manufacturing. The results show that in case of low resistivity (<25 mΩ cm) wafers, microcracks can be detected at any stage of the processing—even after diamond‐wire slicing. When resistivity increases, visibility of microcracks reduces in process steps that produce uneven surfaces. Nevertheless, they can still be detected after slurry‐wire slicing, lapping, alkaline etching, and polishing. According to the results, unlike resistivity, other material parameters such as dopant species, crystal orientation, and wafer thickness have no similar impact on visibility of microcracks in PLI. Furthermore, all wafers produce a decent photoluminescence (PL) signal without a need for separate sample preparation. Based on these results, general recommendations for the in‐line detection of microcracks for Cz‐Si wafer manufactures are provided. While this study focuses on microcracks, the results and discussion include broader perspectives on the defect characterization in Cz‐Si wafer manufacturing via PLI.

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Mechanism behind the Crack Formation in Hydrogen Doping Cz-Si Crystal Growth

Cited by 4 publications

References 11 publications

Evaluation of Cleavage Fracture Behavior of C14 Fe<sub>2</sub>W Laves Phase by First-principles Calculations and Crystal Orientation Analysis

Evaluation of Cleavage Fracture Behavior of C14 Fe<sub>2</sub>W Laves Phase by First-principles Calculations and Crystal Orientation Analysis

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

Detection of Microcracks in Cz‐Si Wafer Manufacturing by Photoluminescence Imaging

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