Mechanism and observation of Mott transition in VO<sub>2</sub>-based two- and three-terminal devices

Kim, Hyun-Tak; Chae, Byung-Gyu; Youn, Doo–Hyeb; Maeng, Sunglyul; Kim, Gyungock; Kang, Kwang‐Yong; Lim, Young-Tae

doi:10.1088/1367-2630/6/1/052

Cited by 428 publications

(288 citation statements)

References 34 publications

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“…The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice.…”

Section: Pacs Numbersmentioning

confidence: 99%

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Arcangeletti¹,

Baldassarre²,

Castro³

et al. 2007

Phys. Rev. Lett.

191

171

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Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO2 at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*∼10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P>P*. Differently from ambient pressure, where the VO2 metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO2. PACS numbers:Since the first observation of the metal to insulator transition (MIT) in several vanadium oxides, these materials attracted considerable interest because of the huge and abrupt change of the electrical properties at the MIT. As usual in transition metal oxides, electronic correlation strongly affects the conduction regime of vanadium oxides, although, in some compounds, lattice degrees of freedom seem to play an important role. This is the case of VO 2 , which undergoes a first order transition from a high temperature metallic rutile (R) phase to a low temperature insulating monoclinic (M1) one. At the MIT temperature, T c =340 K, the opening of an optical gap in the mid-infrared (MIR) conductivity and a jump of several order of magnitude in the resistivity are observed [1]. The interest on this compound is thus mainly focused on understanding the role and the relative importance of the electron-electron and the electron-lattice interaction in driving the MIT. Despite the great experimental and theoretical efforts [2], the understanding of this transition is still far from being complete [3,4,5,6,7]. In the R phase the V atoms, each surrounded by an oxygen octahedron, are equally spaced along linear chains in the c-axis direction and form a body-centered tetragonal lattice. On entering the M1 insulating phase the dimerization of the vanadium atoms and the tilting of the pairs with respect to the c axis lead to a doubling of the unit cell, with space group changing from C 5 2h (R) to D 14 4h (M1) [8,9]. As first proposed by Goodenough [10], the V-V pairing and the off-axis zig-zag displacement of the dimers lead to a band splitting with the formation of a Peierls-like gap at the Fermi level. First principle electronic structure calculations based on local density approximation (LDA) showed the band splitting on entering the monoclinic phase, but failed to yield the opening of the band gap [11,12]. In fact, as early pointed out [13], the electron-electron correlation has to be taken into account to obtain the insulating phase. A recent theoretical paper where the electronic Coulomb repulsion U is properly accounted for, shows that calculations carried out joining dynamical mean field theory with...

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Section: Pacs Numbersmentioning

confidence: 99%

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Arcangeletti¹,

Baldassarre²,

Castro³

et al. 2007

Phys. Rev. Lett.

191

171

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“…Richardson and Coath, 1998;Jiang and Carr, 2004;Wang et al, 2006) or electrical switches development (thin films and single-crystal structures) (e.g. Guzman et al, 1996;Stefanovich et al, 2000;Qazilbash et al, 2007;Kim et al, 2004), but the functioning of the proposed devices is based mainly on the thermal activation of the MIT transition which is far more slow than the purely electric or optical-activated ones (massive charge injection or optical activation). The very few reports concerning the possible integration of VO 2 thin films in devices and systems for RF and millimetre wave applications concerns their dielectric properties in this domains (Hood & DeNatale, 1991), the fabrication of submillimeter -wave modulators and polarizers (Fan et al, 1977), of thermally controlled coplanar microwave switches (Stotz et al, 1999) and numerical simulations of VO 2 -based material switching operation in the RF-microwave domain (Dragoman et al, 2006).…”

Section: Vo 2 Materials Properties and Applicationsmentioning

confidence: 99%

Exploiting the Semiconductor-Metal Phase Transition of VO2 Materials: a Novel Direction towards Tuneable Devices and Systems for RF-Microwave Applications

Crunteanu¹,

Givernaud²,

Blondy³

et al. 2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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“…In VO 2 valence band holes in the low T state can trigger the transition since they weaken the net electron-electron repulsion. The critical hole value is estimated to be 0.018% [15] and can be achieved by raising T, doping, band bending, and with optical pumping [9,10].…”

Section: Electrical and Optical Propertiesmentioning

confidence: 99%

Dual metal–insulator and insulator–insulator switching in nanoscale and Al doped VO₂

Gentle¹,

Smith²

2007

J. Phys. D: Appl. Phys.

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Thin films of VO 2 doped with aluminium, or with nanoscale grain sizes, have been produced. They display semiconductor resistive behaviour above the transition temperature T c , but metallic and plasmonic optical response. All samples optically switch over almost identical large ranges at the transition, but have quite variable resistive switching. At fixed grain size a rigorous new quantitative correlation is found between semiconductor resistivity below T c and the activation energy above T c as Al doping level varies. Large crystals doped with Al also display this dual behaviour. A possible mechanism is discussed involving fast local fluctuations on neighbouring V 4+ ions involving transient dimers with no net spin. Such fluctuations would then need to interact and correlate their motion over the scale of a nanograin within the lifetime of the dimer excitation.

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Mechanism and observation of Mott transition in VO₂-based two- and three-terminal devices

Cited by 428 publications

References 34 publications

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Exploiting the Semiconductor-Metal Phase Transition of VO2 Materials: a Novel Direction towards Tuneable Devices and Systems for RF-Microwave Applications

Dual metal–insulator and insulator–insulator switching in nanoscale and Al doped VO₂

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Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices

Cited by 428 publications

References 34 publications

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Evidence of a Pressure-Induced Metallization Process in MonoclinicVO2

Exploiting the Semiconductor-Metal Phase Transition of VO2 Materials: a Novel Direction towards Tuneable Devices and Systems for RF-Microwave Applications

Dual metal–insulator and insulator–insulator switching in nanoscale and Al doped VO2

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Mechanism and observation of Mott transition in VO₂-based two- and three-terminal devices

Dual metal–insulator and insulator–insulator switching in nanoscale and Al doped VO₂