Mechanism and control of crack generation in glass substrates during crystallization of a-Si Films by flash lamp annealing

Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Sawada, Keisuke; Matsumura, Hideki

doi:10.1016/j.jnoncrysol.2011.12.089

Cited by 5 publications

(6 citation statements)

References 18 publications

(23 reference statements)

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“…The temperature of an a-Si film increases up to around 1200°C at 5 ms. On the other hand, only a 50-100 m thick region from the surface of a glass substrate is heated by FLA. Because of the selective heating, a glass substrate does not entirely receive a thermal damage. This vertical thermal gradient can also be a cause of cracking in glass substrates, and we need the careful selection of a glass material to suppress glass cracking [10]. It should be emphasized that a fluence of 6.4 J/cm 2 is much smaller than those of actual experimental values of more than 10 J/cm 2 .…”

Section: Figmentioning

confidence: 99%

“…Of a variety of methods to form thin c-Si, the crystallization of precursor amorphous silicon (a-Si) films on lowcost substrates has been expected as a prospective candidate [1][2][3]. We have investigated the crystallization of a-Si films by flash lamp annealing (FLA), millisecond-order rapid annealing using a pulse light emitted from Xe lamps [4][5][6][7][8][9][10][11]. Because of its proper annealing duration, FLA can realize the sufficient heating of a micrometreorder thick a-Si film without serious thermal damage onto an entire glass substrate.…”

Section: Introductionmentioning

confidence: 99%

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A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing

Ohdaira

2014

Can. J. Phys.

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Flash lamp annealing (FLA) of micrometre-order thick amorphous silicon (a-Si) films can induce explosive crystallization (EC), high-speed lateral crystallization driven by the release of latent heat. We develop multipulse FLA system, which emits a quasi-millisecond pulse consisting of a number of subpulses. The emission frequency of the subpulses can be systematically controlled, and the emission of subpulses leads to the periodic modulation of the temperature of a Si film and the resulting formation of macroscopic stripe patterns. The relationship between a subpulse emission frequency and the width of the macroscopic stripe patterns yields EC velocity. Two kinds of EC modes can be observed, depending on the methods of precursor a-Si deposition and (or) a-Si film thickness.Résumé : Le recuit par lampe à décharge (FLA) de films de silicium amorphe (a-Si) peut causer une cristallisation spontanée (explosive) (EC) ou une cristallisation latérale induite, soutenue par le rejet de chaleur latente. Nous développons un système de recuit par lampe à décharge multi-pulse qui émet des impulsions presque milliseconde consistant en un nombre de sousimpulsions. La fréquence d'émission de ces sous-impulsions peut être contrôlée et l'émission de ces sous-impulsions mène à une modulation de la température du film de Si, d'où il résulte la formation d'un patron en bandes macroscopiques. La relation entre la fréquence d'émission des sous-impulsions et la largeur de ces bandes donne la vitesse de EC. Nous observons deux types de modes EC, dépendant de la méthode de déposition du précurseur Si et (ou) de l'épaisseur du film de a-Si. [Traduit par la Rédaction]

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Section: Figmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing

Ohdaira

2014

Can. J. Phys.

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“…[10][11][12][13][14][15] We have thus far investigated FLA as a method of crystallizing micrometer-order-thick a-Si films. [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] In particular, the utilization of electron-beam (EB)-evaporated a-Si films results in the formation of poly-Si films consisting of grains with a length of >10 µm owing to the occurrence of liquid-phase explosive crystallization during FLA. [26][27][28][29][30] Although this feature is favorable for the application of flash-lamp-crystallized (FLC) poly-Si to solar cells, EB-evaporated a-Si films need a higher fluence for crystallization than a-Si films prepared by other methods. [26][27][28][29][30] The fluence of a flash pulse may be reduced if the loss of a flash-lamp pulse light is minimized by suppressing optical reflection.…”

Section: Introductionmentioning

confidence: 99%

Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing

Sonoda¹,

Ohdaira²

2017

Jpn. J. Appl. Phys.

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We succeed in decreasing the fluence of a flash-lamp pulse required for the crystallization of electron-beam (EB)-evaporated amorphous silicon (a-Si) films using silicon nitride (SiN x ) antireflection films. The antireflection effect of SiN x is confirmed not only when SiN x is placed on the surface of a-Si or flash lamp annealing (FLA) is performed from the film side, but also when SiN x is inserted between glass and a-Si and a flash pulse is supplied from the glass side. We also quantitatively confirm, by calculating flash-lamp pulse energies actually reaching a-Si films using reflectance spectra, that the reduction in the fluence of a flash-lamp pulse for the crystallization of a-Si films is due to the antireflection effect of SiN x .

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“…Conversion efficiencies of 8% where reached with these two concepts . However, in both cases cracks occur due to the high temperature gradients introduced by the localized crystallization techniques . Similar phenomena caused by mechanical stress are an ongoing object of research for the past decades .…”

Section: Introductionmentioning

confidence: 99%

Thermal stresses and cracking behavior during laser crystallization of silicon on glass for thin film solar cells

Pliewischkies

Schmidt

Höger

et al. 2014

Phys. Status Solidi A

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During the preparation of silicon thin film solar cells on glass substrates by diode laser induced liquid phase crystallization (LPC), cracking is an issue. This is due to thermal stresses caused by high temperature gradients within the sample. In this paper, the relation between thermal stress and the temperature distribution within the sample during LPC is discussed. Experiments for two sets of laser irradiation parameters were done leading to crack free or cracked crystallization of the film. Additionally, the evolution of temperature during LPC was modeled numerically. Based on the simulation, the thermal stresses introduced were calculated. The complex viscoelastic problem was simplified to an elastic multilayer model, which can be solved analytically. The theoretical results can explain the experimental behavior.

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Mechanism and control of crack generation in glass substrates during crystallization of a-Si Films by flash lamp annealing

Cited by 5 publications

References 18 publications

A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing

A method to evaluate explosive crystallization velocity of amorphous silicon films during flash lamp annealing

Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing

Thermal stresses and cracking behavior during laser crystallization of silicon on glass for thin film solar cells

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