Mechanics of Smart-Cut® technology

Feng, Xi‐Qiao; Huang, Yiping

doi:10.1016/j.ijsolstr.2004.02.054

Cited by 67 publications

(48 citation statements)

References 53 publications

(105 reference statements)

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“…Finally, we note that the hole's diameter and depth is limited by the ion implantation machine to the order of microns. The hydrogen ion penetration depth varies approximately linearly with the implantation energy and does not depend on the implantation dose [Feng and Huang 2004]. …”

Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 95%

“…See Figure 7 for a schema of the basic procedure. The wafer is covered with a specialized metal mask and exposed to an appropriate dose of hydrogen ions at room-temperature [Feng and Huang 2004]. The mask's holes conform to the required wafer surface pattern, and it is thick enough so that hydrogen ions cannot pass Figure 7.…”

Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 99%

“…A large kinking angle requires a sufficiently large q; however, since the mode-I SIF decreases linearly with q, the crack will close and cease to propagate if q is too large. We note that the internal pressure p depends mainly upon the dose of implanted hydrogen ions and the temperature [Feng and Huang 2004]. Therefore, in order to cut a circular hole, an appropriate force q should be chosen from Figure 10 to conform to the required hole depth.…”

Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 99%

“…By implanting erbium into the top layer of a Smart-Cut SOI wafer, Gad et al [2003] fabricated single-mode SOI waveguides with good optical quality. Recently, Feng and Huang [2004] studied the fundamental physics and mechanics of the Smart-Cut technology.…”

Section: Introductionmentioning

confidence: 99%

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Fracture mechanics analysis of three-dimensional ion cut technology

Feng

Wang

et al. 2007

JOMMS

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The recently established ion cut technology enables accurate fabrication of silicon-on-insulator (SOI) wafers and has found some other significant applications. We study fracture mechanics of the technology when directly cutting a wafer into a desired surface morphology. First, we describe integral transformbased methods for calculating the stress intensity factors of subsurface cracks embedded in a semiinfinite solid. Because the crack and the free surface interact, the crack tip fields are generally of I-II mixed mode. We derive solutions for plane-strain or axisymmetrical configurations. We then analyze the suggested three-dimensional ion cut method using the fracture criterion for kinking propagation of a mixed-mode crack. To illustrate the approach, we consider circular hole and straight groove surface patterns.

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Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 95%

Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 99%

Section: Analysis Of Three-dimensional Ion Cutmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fracture mechanics analysis of three-dimensional ion cut technology

Feng

Wang

et al. 2007

JOMMS

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“…While the evolution of vacancy-type defects in silicon is of fundamental interest, 1 its control has long played an important role in the development of useful device structures, 2 for example, in gettering metallic impurities, 3 wafer separation, 4 and the suppression of dopant diffusion. [5][6][7] Kalyanaraman et al 8,9 used Au labeling to study the formation of nanovoids in Si.…”

mentioning

confidence: 99%

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Coleman

Nash

Edwardson

et al. 2011

Journal of Applied Physics

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Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities J. Appl. Phys. 110, 093510 (2011) Diffusion of Ag and Co in ultrafine-grained -Ti deformed by equal channel angular pressing J. Appl. Phys. 110, 083514 (2011) Kinetics of large B clusters in crystalline and preamorphized silicon J. Appl. Phys. 110, 073524 (2011) Mn segregation in Ge/Mn5Ge3 heterostructures: The role of surface carbon adsorption Appl. Phys. Lett. 99, 151908 (2011) Lifetime-degrading boron-oxygen centres in p-type and n-type compensated silicon

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Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

Liu

Mai

et al. 2008

Acta Mech Sin

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In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indicate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF's. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.

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Mechanics of Smart-Cut® technology

Cited by 67 publications

References 53 publications

Fracture mechanics analysis of three-dimensional ion cut technology

Fracture mechanics analysis of three-dimensional ion cut technology

The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy

Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

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