2016
DOI: 10.1007/s40145-015-0166-9
|View full text |Cite
|
Sign up to set email alerts
|

Mechanically induced stiffening, thermally driven softening, and brittle nature of SiC

Abstract: An effective interionic potential calculation with long range Coulomb, charge transfer interaction, covalency effect, short range overlap repulsion extended, van der Waals interaction, and zero point energy effect is implemented to investigate the pressure dependent structural phase transition (ZnS-type (B3) to NaCl-type (B1) structure), and mechanical, elastic, and thermodynamic properties of silicon carbide (SiC). Both charge transfer interaction and covalency effect are important in revealing the pressure i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 62 publications
(134 reference statements)
0
3
0
Order By: Relevance
“…Generally speaking, the electro-mechanical coupling is only limited to dielectrics due to the requirement of insulation. But more and more studies have disclosed that semiconductors can be regarded as electromechanical materials, e.g., the ZnO semiconductor is a piezoelectric material [82][83][84]. In 2016, Narvaez et al [85] made a new breakthrough in flexoelectricity and greatly broadened the concept of flexoelectricity into semiconductors.…”
Section: Flexoelectricity In Semiconductormentioning
confidence: 99%
“…Generally speaking, the electro-mechanical coupling is only limited to dielectrics due to the requirement of insulation. But more and more studies have disclosed that semiconductors can be regarded as electromechanical materials, e.g., the ZnO semiconductor is a piezoelectric material [82][83][84]. In 2016, Narvaez et al [85] made a new breakthrough in flexoelectricity and greatly broadened the concept of flexoelectricity into semiconductors.…”
Section: Flexoelectricity In Semiconductormentioning
confidence: 99%
“…Graphite is an attractive material for HT application and has been widely used as structural material due to the excellent HT mechanical properties [42,43]. And SiC is being considered as a protective coating to protect the graphite from oxidation [44,45] due to its excellent and superior properties of melting point, thermal shock resistance, and chemical inertness [46]. The mechanical properties of SiC coating are the essential prerequisites for achieving its functionality.…”
Section: Materials and Experimental Processmentioning
confidence: 99%
“…Silicon carbide (SiC) is a strong covalent compound composed of CSi 4 and SiC 4 tetrahedron lattices interpenetrating each other, which has been widely applied in aerospace, nuclear, and optical fields ascribed to its incomparable strength, thermostability, and corrosion resistance [1][2][3][4][5]. Nevertheless, its intrinsic brittleness is a major obstacle for hightemperature structural applications [6].…”
Section: Introductionmentioning
confidence: 99%