Mechanically-excited emission in cadmium sulfide

Warschauer, D. M.; Reynolds, D. C.

doi:10.1016/0022-3697(60)90008-1

Cited by 20 publications

(5 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This phenomenon of stored conductivity has been described in CdS (Kulp 1965, Warschauer and Reynolds 1960, Litton and Reynolds 1960 in GaAs (G. A. Allen, private communication) and ZnO (C. W. Litton, private communication). Associated with this effect is another which manifests itself by the storage of energy in certain crystals until they are mechanically or optically disturbed, when the energy is released in the form of light.…”

Section: Introductionmentioning

confidence: 65%

“…It has been shown (Warschauer and Reynolds 1960) that stored light can be removed from a crystal by irradiating it with light of photon energy 0.76 ev. The quenching of stored conductivity was attempted by subjecting a crystal, saturated with stored conductivity, to known fluxes of photons of known energy.…”

Section: Localization and Quenching Of Stored Conductivitymentioning

confidence: 99%

“…Associated with this effect is another which manifests itself by the storage of energy in certain crystals until they are mechanically or optically disturbed, when the energy is released in the form of light. The published work (Warschauer and Reynolds 1960, Litton and Reynolds 1960 deals with this also.…”

Section: Introductionmentioning

confidence: 96%

See 2 more Smart Citations

The Anomalous Diffusion of Gallium in Silicon

Nakajima

Ohkawa

1971

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A model for conductivity storage in CdS is proposed. It involves a storage level from which electrons are excited while the collection of these electrons by a receiving level is accompanied by local crystal deformation allowing the quasi-equilibrium state, which stored conductivity represents, to be set up. Published literature dealing with the sensitivity of CdS electrical properties to thermal or mechanical stress lends credibility to the model.Various techniques of photoelectronic analysis are used to obtain values of 5 x 10-l6 cm2 for the photon-capture cross section and cm2 for the recapture cross section of a stored conductivity carrier. Storage level densities ranged from 1016 to 1019 ~m -~ with various crystals. 113I593

show abstract

Section: Introductionmentioning

confidence: 65%

Section: Localization and Quenching Of Stored Conductivitymentioning

confidence: 99%

See 1 more Smart Citation

The Anomalous Diffusion of Gallium in Silicon

Nakajima

Ohkawa

1971

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Some semiconductor crystals when suitably stimulated can assume, quasi-permanently, high electrical conductivities. This phenomenon of stored conductivity has been described in CdS (Kulp 1965, Warschauer and Reynolds 1960, Litton and Reynolds 1960 in GaAs (G. A. Allen, private communication) and ZnO (C. W. Litton, private communication). Associated with this effect is another which manifests itself by the storage of energy in certain crystals until they are mechanically or optically disturbed, when the energy is released in the form of light.…”

Section: Introductionmentioning

confidence: 65%

Conductivity storage in CdS

Wright

Downey

Canning

1968

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

A model for conductivity storage in CdS is proposed. It involves a storage level from which electrons are excited while the collection of these electrons by a receiving level is accompanied by local crystal deformation allowing the quasi-equilibrium state, which stored conductivity represents, to be set up. Published literature dealing with the sensitivity of CdS electrical properties to thermal or mechanical stress lends credibility to the model.Various techniques of photoelectronic analysis are used to obtain values of 5 × 10−16 cm2 for the photon-capture cross section and 10−30 cm2 for the recapture cross section of a stored conductivity carrier. Storage level densities ranged from 1016 to 1019 cm−3 with various crystals.

show abstract

“…In [7,8], there have been carried out various investigations of irradiated Si including the methods of EPR, photoconductivity and IR-absorption, on the basis of which there has been created a model of radiation defect responsible for absorption bands 1.8, 3.3, and 3.9 μm in the spectrum of IR-absorption of Si. These bands appear as a result of absorption in divacancy that may be in various charge states.…”

Section: Resultsmentioning

confidence: 99%

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge1−xSix irradiated by fast electrons at the temperature 77 K

Abbasov¹

2006

Semicond. phys. quantum electron. optoelectron.

View full text Add to dashboard Cite

Ge 1−x Si x solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge 1−x Si x solid solution irradiated by fast electrons.

show abstract

Mechanically-excited emission in cadmium sulfide

Cited by 20 publications

References 20 publications

The Anomalous Diffusion of Gallium in Silicon

The Anomalous Diffusion of Gallium in Silicon

Conductivity storage in CdS

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge1−xSix irradiated by fast electrons at the temperature 77 K

Contact Info

Product

Resources

About