Mechanically driven domain wall movement in magnetoelastic nanomagnets

Mathurin, Théo; Giordano, Stefano; Dusch, Yannick; Tiercelin, Nicolas; Pernod, Philippe; Preobrazhensky, V.

doi:10.1140/epjb/e2016-70226-0

Cited by 7 publications

(5 citation statements)

References 56 publications

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“…[53][54][55]). In addition, an explicit expression of the demagnetizing field related to the parallelepiped with variable cross-section is presented in the works [19,56,57]. To be precise, in these studies, the ferromagnetic material/nanostrip region is divided into several parallelepipeds of varying sizes, and the total demagnetization field at any given point is then determined by summing up the individual contributions from each parallelepipedal region.…”

Section: The One-dimensional Micromagnetic Modelmentioning

confidence: 99%

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

Halder,

Maity,

Dwivedi

2024

Z Angew Math Mech

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The present work deals with an analytical study of the statical and dynamical behavior of transverse magnetic domain walls in hybrid bilayer piezoelectric/magnetostrictive heterostructures under the combined influence of spin‐polarized electric currents, transverse, and axial applied magnetic fields. The magnetostrictive material is considered to be isotropic and linearly elastic. We perform the investigation within the framework of the one‐dimensional Landau–Lifshitz–Gilbert equation. By employing the regular perturbation asymptotic expansion approach, we derive the explicit analytical expression of the most significant dynamic features, namely, traveling wave profile, DW velocity, and displacement under the influence of small and moderate transverse magnetic fields. Finally, we illustrate numerically the analytical results and delineate the domain wall motion for metallic and semiconductor ferromagnets.

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Section: The One-dimensional Micromagnetic Modelmentioning

confidence: 99%

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

Halder,

Maity,

Dwivedi

2024

Z Angew Math Mech

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“…In the general case in which the magnetostrictive strain e (m) is subjected to no constraint, the magnetostriction tensor Z is represented directly as a generic fourth-order tensor enjoying minor symmetry. Very often, the magnetostrictive strain is assumed to be perfectly isochoric [21][22][23][24], i.e.,…”

Section: Representation Of the Magnetostriction Tensormentioning

confidence: 99%

“…Moreover, to deal with a simpler framework and a lower number of independent material constants, constraints, which do not have general validity, are often imposed on the magnetostriction. For instance, the magnetostrictive strain is often assumed to be isochoric [21][22][23][24] and the fourth-order magnetostriction tensor is sometimes treated as a tensor enjoying major symmetry (e.g., [25,26]), the latter being true only in some particular cases.…”

Section: Introductionmentioning

confidence: 99%

Tensor representation of magnetostriction for all crystal classes

Federico

Consolo

Valenti

2018

Mathematics and Mechanics of Solids

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A systematic representation of the fourth-order magnetostriction tensor for all crystal classes is presented, based on the formalism proposed by Walpole ( Proc R Soc Lond Ser A 1984; 391: 149–179). This representation allows the general, unconstrained case, as well as the case in which the magnetostrictive strain is assumed to be isochoric, to be studied. The knowledge of the fourth-order magnetostriction tensor enables the stress-free magnetostrictive strain tensor as well as the scalar strain in a given direction to be calculated.

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“…Pickup of voltage using a pickup coil was used for sensing the domain wall motion . An analytical model for stress‐induced transverse domain wall movement in ferromagnetic nanostripe has also been proposed …”

Section: Introductionmentioning

confidence: 99%

“…Moreover, ceramic ferroelectric layers, like PZT, require high-temperature deposition or postdeposition annealing (>400 °C) under severe oxidation conditions, which inevitably degrade the magnetic properties. [32] In this article, we report that the domain walls in magnetic microwires made of crystalline ferromagnetic films can be moved by merely applying mechanical stress. In the past, amorphous magnetic materials have been studied for domain wall dynamics under stress.…”

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confidence: 99%

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

Bhatti

Liu

et al. 2018

Adv Elect Materials

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domains store information states and the information is read by moving the domains. [11,[14][15][16][17][18] Domain wall movement can also be explored for energy harvesting by converting stress into changes in magnetization and thus into electrical voltage. In the energy harvesting investigations reported so far, domain wall motion is accomplished only in multiferroic structures, where stress was induced by providing an electrical energy to the ferroelectric layers. [19][20][21][22][23][24][25] Employing significant amounts of electrical energy, however, defeats the purpose of energy harvesting. Moreover, ceramic ferroelectric layers, like PZT, require high-temperature deposition or postdeposition annealing (>400 °C) under severe oxidation conditions, which inevitably degrade the magnetic properties. [26] Therefore, stress-induced motion of domain walls in pure magnetic films without the use of ferroelectric layers and a supplied energy is a better approach for self-power generation. In the past, amorphous magnetic materials have been studied for domain wall dynamics under stress. [27,28] Pickup of voltage using a pickup coil was used for sensing the domain wall motion. [29][30][31] An analytical model for stress-induced transverse domain wall movement in ferromagnetic nanostripe has also been proposed. [32] In this article, we report that the domain walls in magnetic microwires made of crystalline ferromagnetic films can be moved by merely applying mechanical stress. The key recipes for the successful observation of such domain wall movement are: (i) a magnetic stack of CoNi/Fe 65 Co 35 /CoNi with which we have controlled the microstructures, (ii) an induced magnetic easy axis that we set by the direction of fringing magnetic field during the deposition (see the Supporting Information), and (iii) the use of flexible substrates with which we could enhance the stress delivered to the device from ambient sources, which is otherwise impossible with rigid substrates like Si. With a prototype device, we have shown in this article, the motion of domain walls under applied stress and have harvested energy.

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Mechanically driven domain wall movement in magnetoelastic nanomagnets

Cited by 7 publications

References 56 publications

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

Tensor representation of magnetostriction for all crystal classes

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

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