Mechanically controlled reversible photoluminescence response in all-inorganic flexible transparent ferroelectric/mica heterostructures

Abstract

The ability to reversibly control the luminescent properties of functional materials with diverse external stimuli, such as an electric field, strain, and temperature, is crucial for designing high-performance optical devices. Here, we demonstrate that a purely mechanical strain in a flexible mica substrate triggered by bending can be used to dramatically modify the photoluminescence response of a Pr-doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 epitaxial thin film in a stable and repeatable manner with a large gauge factor of up to 6853. The strong dependence of the photoluminescence performance on the mechanical bending arises from strain-induced variations in the lattice symmetry of the host film and the local crystal field around the Pr 3+. In particular, because of the nature of mica, the film structure exhibits excellent antifatigue characteristics after 10 4 bending cycles as well as high optical transparency in the range of 450-780 nm. This study provides a viable route for exploring the correlation between structural symmetry and photoluminescence in ferroelectric thin-film systems and offers new possibilities for developing allinorganic, reconfigurable, transparent and flexible light sources, photodetectors, and wearable sensors. 17 , multiferroic BiFeO 3-CoFe 2 O 4 18 , metallic

Freestanding Perovskite Oxide Films: Synthesis, Challenges, and Properties

“…[ 103,105 ] It is also worth noting that bending strain may affect other functional properties of perovskite oxides thin films, such as the photoluminescence intensity of Pr‐doped Ba 0.85 Ca 0.15 Ti 0.9 Zr 0.1 O 3 thin films. [ 147 ]…”

Multilayer Substrate to Use Brittle Materials in Flexible Electronics

“…For flexible optoelectronic applications, there have been much efforts to increase the flexibility of brittle indium tin oxide (ITO); [20][21][22] however, these methods included complicated and high-priced processes. MICAtronics utilizes mica substrate to make flexible devices with van der Waals epitaxy [23][24][25][26] . Optoelectronic devices on mica showed good endurance under 10 4 bending cycles at bending radius of 2 mm 23,24 .…”

“…MICAtronics utilizes mica substrate to make flexible devices with van der Waals epitaxy [23][24][25][26] . Optoelectronic devices on mica showed good endurance under 10 4 bending cycles at bending radius of 2 mm 23,24 . However, weak adhesion between the substrate and device layers remains challenges for multiple fabrication steps, and it is yet large-area compatible.…”

Tuning of Thermoelectric Properties of MoSe2 Thin Films Under Helium Ion Irradiation

“…Absence of peaks other than the strong (002) peak indicated well-stacked layered growth along the c -axis of the mica substrates. The strong peaks at 2θ = 17.5° and 26.5° corresponded to the (001) and (002) planes of the mica substrate, respectively [ 35 ]. When the films were irradiated with the He + beam, the (002) peak’s intensity gradually decreased and shifted toward lower angles.…”